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STTH8S06D

P1-P3P4-P6P7-P9P10-P12
February 2017
DocID14277 Rev 2
1/12
This is information on a product in full production.
www.st.com
STTH8S06
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Features
Ultrafast recovery
Low reverse recovery current
Low thermal resistance
Higher frequency operation
Reduces switching and conduction losses
Insulated TO-220FPAC:
Insulating voltage = 2000 V
RMS
Package capacitance = 12 pF
Description
This device is an ultrafast diode based on 600 V
Pt doping planar technology.
It can be used in hard switching conditions for
power factor corrections. Its extremely low
reverse recovery current reduces the switching
power losses of the MOSFET and thus increases
the overall application efficiency.
This diode is also intended for applications in
power supplies and power conversions systems,
and all sorts of power switching.
Table 1: Device summary
Symbol
I
F(AV)
8 A
V
RRM
600 V
I
RM
(typ.)
4.4 A
V
F
(typ.)
1.5 V
T
j
(max.)
175 °C
t
rr
(typ.)
12 ns
K
A
TO-220AC
A
K
TO-220FPAC
K
A
K
Characteristics
STTH8S06
2/12
DocID14277 Rev 2
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(AV)
Average forward current δ = 0.5 square wave
8
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms
60
A
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
175
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-c)
Junction to case
TO-220AC,
DPAK
3.0
°C/
W
TO-220FPAC
5.5
Table 4: Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
Reverse leakage current
T
j
= 25 °C
V
R
= 600 V
-
20
µA
T
j
= 125 °C
-
25
200
V
F
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
-
3.4
V
T
j
= 150 °C
-
1.5
1.9
To evaluate the maximum conduction losses, use the following equation:
P = 1.20 x I
F(AV)
+ 0.087 x I
F
2
(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = - 200 A/μs,
V
R
= 30 V
-
12
18
ns
I
RM
Reverse recovery
current
I
F
= 8 A,
dI
F
/dt = - 200 A/μs,
V
R
= 200 V
-
1.6
2.2
A
S
factor
Softness factor
-
1
-
Q
rr
Reverse recovery
charges
-
17
nC
I
RM
Reverse recovery
current
T
j
= 125 °C
I
F
= 8 A,
dI
F
/dt = - 200 A/μs,
V
R
= 200 V
-
4.4
6.0
A
S
factor
Softness factor
-
0.3
-
Q
rr
Reverse recovery
charges
-
90
nC
STTH8S06
Characteristics
DocID14277 Rev 2
3/12
1.2 Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current
Figure 2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC)
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAC)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration(DPAK)
Figure 5: Peak reverse recovery current versus
dI
F
/dt (typical values)
Figure 6: Reverse recovery time versus dI
F
/dt
(typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Single pulse
Z
th(j-c)
/R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ
=tp/T
tp
t (s)
p
Z
th(j-c)
/R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t
P
(s)
Z
th(j-c)
/R
th(j-c)
Singlepulse
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
0 200 400 600 800 1000
V = 200 V
T =125 °C
R
j
I =2 x I
F F(AV)
I =0.5 x I
F F(AV )
I =I
F F(AV)
I
RM
(A)
dl
F
/dt(A/µs)
0
10
20
30
40
50
60
70
0 200 400 600 800 1000
I =2 x I
F F(AV )
I =I
F F(AV)
I =0.5 x I
F F(AV)
V = 200 V
T = 125 °C
R
j
dl
F
/dt(A/µs)
t
rr
(ns)
P1-P3P4-P6P7-P9P10-P12

STTH8S06D

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Manufacturer:
STMicroelectronics
Description:
Rectifiers ULT FAST HI VLT RECT TURBO 2
Lifecycle:
New from this manufacturer.
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