TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
http://onsemi.com
5
1.0
Figure 6. TIP115, 116, 117
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1
10 60 80 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 150°C
dc
1ms
40
TIP115
TIP116
TIP117
SECONDARY BREAKDOWN LIMITED
5ms
CURVES APPLY BELOW
RATED V
CEO
1.0
Figure 7. TIP110, 111, 112
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1
10 80 100
I
C
, COLLECTOR CURRENT (AMPS)
60
TIP110
TIP111
TIP112
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
T
J
= 150°C
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
dc
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on T
J(pk)
= 150°C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
0.04
V
R
, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0 2.0 404.00.06 0.1 0.2
C, CAPACITANCE (pF)
70
30
T
C
= 25°C
C
ib
50
C
ob
PNP
NPN
Figure 8. Capacitance
100
20
6.0 10 20
