©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
FJN4308R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -50 V
V
CEO
Collector-Emitter Voltage -50 V
V
EBO
Emitter-Base Voltage -10 V
I
C
Collector Current -100 mA
P
C
Collector Power Dissipation 300 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -10µA, I
E
=0 -50 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -100µA, I
B
=0 -50 V
I
CBO
Collector Cut-off Current V
CB
= -40V, I
E
=0 -0.1 µA
h
FE
DC Current Gain V
CE
= -5V, I
C
= -5mA 56
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA -0.3 V
f
T
Current Gain Bandwidth Product V
CE
= -10V, I
C
= -5mA 200 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0
f=1.0MHz
5.5 pF
V
I
(off) Input Off Voltage V
CE
= -5V, I
C
= -100µA-0.8 V
V
I
(on) Input On Voltage V
CE
= -0.3V, I
C
= -2mA -4 V
R
1
Input Resistor 32 47 62 KΩ
R
1
/R
2
Resistor Ratio 1.9 2.1 2.4
FJN4308R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=47KΩ, R
2
=22KΩ)
• Complement to FJN3308R
Equivalent Circuit
B
E
C
R1
R2
1. Emitter 2. Collector 3. Base
TO-92
1
