KA5H0165RN Datasheet AT25DL081-SSHN-T, AT25DL081-MHN-T, KA5H0165RN | P1-P3

www.fairchildsemi.com

Rev.1.0.5

Features

• Precision Fixed Operating Frequency (100/67/50kHz )

• Low Start-up Current (Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 25V)

- except KA5H0165RVN

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of high

voltage power SenseFET and current mode PWM IC. Included

PWM controller features integrated fixed oscillator, under

voltage lock out, leading edge blanking, optimized gate turn-on/

turn-off driver, thermal shut down protection, over voltage

protection, and temperature compensated precision current

sources for loop compensation and fault protection circuitry

compared to discrete MOSFET and controller or R

switching converter solution, The Fairchild Power Switch(FPS)

can reduce total component count, design size, weight and at the

same time increase efficiency, productivity, and system

reliability. It is well suited for cost effective design of flyback

converters.

TO-220F-4L 8-DIP

1.6.7.8. Drain

2. GND

3. Vcc

4. FB

5. NC

1. GND

2. Drain

3. Vcc

4. FB

Internal Block Diagram

32V

2.5R

1mA

0.1V

−

OVER VOLTAGE S/D

−

7.5V

27V

Thermal S/D

Power on reset

−

L.E.B

OSC

Vref

Internal

bias

Good

logic

SFET

DRAIN

GND

KA5x0165Rxx-SERIES

KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN,

KA5H0165RVN

Fairchild Power Switch(FPS)

KA5X0165RXX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L=24mH, starting Tj=25°C

Characteristic Symbol Value Unit

Drain-Gate Voltage (R

=1MΩ)V

DGR

650 V

Gate-Source (GND) Voltage V

±30 V

Drain Current Pulsed

(1)

4.0 A

Continuous Drain Current (T

=25°C) I

1.0 A

Continuous Drain Current (T

=100°C) I

0.7 A

Single Pulsed Avalanche Energy

(2)

95 mJ

Maximum Supply Voltage V

CC,MAX

30 V

Analog Input Voltage Range V

-0.3 to V

Total Power Dissipation

40 W

Derating 0.32 W/°C

Operating Junction Temperature. T

+160 °C

Operating Ambient Temperature. T

-25 to +85 °C

Storage Temperature Range. T

STG

-55 to +150 °C

KA5X0165RXX-SERIES

Electrical Characteristics (SFET Part)

(Ta=25°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

rain-Source Breakdown Voltage

DSS

=0V, I

=50µA 650 - - V

ero Gate Voltage Drain Current

DSS

=Max. Rating, V

=0V - - 50 µA

=0.8Max. Rating,

=0V, T

=125°C

- - 200 µA

Static Drain-Source on Resistance

(Note)

DS(ON)

=10V, I

=0.5A - 8 10 Ω

Forward Transconductance

(Note)

gfs V

=50V, I

=0.5A 0.5 - - S

Input Capacitance Ciss

=0V, V

=25V,

f=1MHz

- 250 -

pFOutput Capacitance Coss - 25 -

Reverse Transfer Capacitance Crss - 10 -

Turn on Delay Time td(on)

=0.5B V

DSS

, I

=1.0A

(MOSFET switching time is

essentially independent of

operating temperature)

-12-

Rise Time tr - 4 -

Turn Off Delay Time td(off) - 30 -

Fall Time tf - 10 -

Total Gate Charge

(Gate-Source+Gate-Drain)

=10V, I

=1.0A,

=0.5B V

DSS

(MOSFET

switching time is essentially

independent of operating

temperature)

--21

Gate-Source Charge Qgs - 3 -

Gate-Drain (Miller) Charge Qgd - 9 -

----=

P1-P3 P4-P6 P7-P9 P10-P12

KA5H0165RN

Mfr. #:

Buy KA5H0165RN

Manufacturer:

ON Semiconductor

Description:

IC SWIT PWM CM OVP UVLO HV 8DIP

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

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KA5H0165RN

KA5H0165RN

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