TK040N65Z,S1F Datasheet TK040N65Z,S1F | P1-P3

TK040N65Z

1

MOSFETs Silicon N-Channel MOS (DTMOS)

TK040N65Z

Start of commercial production

2018-07

1.

1. Applications

Applications

• Switching Power Supplies

2.

2. Features

Features

(1) Low drain-source on-resistance: R

DS(ON)

= 0.033 Ω (typ.)

(2) High-speed switching properties with lower capacitance.

(3) Enhancement mode: V

th

= 3 to 4 V (V

DS

= 10 V, I

D

= 2.85 mA)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

TO-247

1: Gate

2: Drain (heatsink)

3: Source

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Single-pulse avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

Mounting torque

(T

c

= 25 )

(Note 1)

(Note 2)

(Note 1)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

E

AS

I

AS

I

DR

I

DRP

T

ch

T

stg

TOR

Rating

650

±30

57

228

360

702

14.2

57

228

150

-55 to 150

0.8

Unit

V

A

W

mJ

A



Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2018-07-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

TK040N65Z

2

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Symbol

R

th(ch-c)

R

th(ch-a)

Max

0.347

50

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 150 .

Note 2: V

DD

= 90 V, T

ch

= 25  (initial), L = 6.16 mH, I

AS

= 14.2 A

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2018-07-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

TK040N65Z

3

6.

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Symbol

I

GSS

I

DSS

V

(BR)DSS

V

th

R

DS(ON)

Test Condition

V

GS

= ±30 V, V

DS

= 0 V

V

DS

= 650 V, V

GS

= 0 V

I

D

= 10 mA, V

GS

= 0 V

V

DS

= 10 V, I

D

= 2.85 mA

V

GS

= 10 V, I

D

= 28.5 A

Min



650

3



Typ.



0.033

Max

±1

2



4

0.040

Unit

µA

V

Ω

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Effective output capacitance

Gate resistance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

MOSFET dv/dt ruggedness

Symbol

C

iss

C

rss

C

oss

C

o(er)

r

g

t

r

t

on

t

f

t

off

dv/dt

Test Condition

V

DS

= 300 V, V

GS

= 0 V, f = 100 kHz

V

DS

= 0 to 400 V, V

GS

= 0 V

V

DS

= OPEN , f = 1 MHz

See Figure 6.2.1

V

DS

≤ V

(BR)DSS

, I

D

≤ 28.5 A

Min



120

Typ.

6250

4

140

230

2

65

120

5

170



Max



Unit

pF

Ω

ns

V/ns

V

DD

≈ 400 V

V

GS

= 10 V/0 V

I

D

= 28.5 A

R

L

= 14 Ω

R

G

= 10 Ω

Duty ≤ 1 %, t

w

= 10 µs

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Q

g

Q

gs1

Q

gd

Test Condition

V

DD

≈ 400 V, V

GS

= 10 V, I

D

= 57 A

Min



Typ.

105

32

27

Max



Unit

nC

6.4.

6.4. Source-Drain Characteristics (T

Source-Drain Characteristics (T

a

= 25

= 25 



 unless otherwise specified)

unless otherwise specified)

Characteristics

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Diode dv/dt ruggedness

Symbol

V

DSF

t

rr

Q

rr

I

rr

dv/dt

Test Condition

I

DR

= 57 A, V

GS

= 0 V

V

DD

= 400 V,

I

DR

= 28.5 A, V

GS

= 0 V

-dI

DR

/dt = 100 A/µs

V

DD

≤ 400 V, I

DR

≤ 28.5 A, V

GS

= 0 V

Min



50

Typ.



410

8

39



Max

-1.7



Unit

V

ns

µC

A

V/ns

2018-07-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

TK040N65Z,S1F

TK040N65Z,S1F

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