© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 6
1 Publication Order Number:
NCP5111/D
NCP5111
High Voltage, High and Low
Side Driver
The NCP5111 is a high voltage power gate driver providing two
outputs for direct drive of 2 N−channel power MOSFETs or IGBTs
arranged in a half−bridge configuration.
It uses the bootstrap technique to ensure a proper drive of the
high−side power switch.
Features
• High Voltage Range: up to 600 V
• dV/dt Immunity ±50 V/nsec
• Gate Drive Supply Range from 10 V to 20 V
• High and Low Drive Outputs
• Output Source / Sink Current Capability 250 mA / 500 mA
• 3.3 V and 5 V Input Logic Compatible
• Up to V
CC
Swing on Input Pins
• Extended Allowable Negative Bridge Pin Voltage Swing to −10 V
for Signal Propagation
• Matched Propagation Delays between Both Channels
• One Input with Internal Fixed Dead Time (650 ns)
• Under V
CC
LockOut (UVLO) for Both Channels
• Pin−to−Pin Compatible with Industry Standards
• These are Pb−Free Devices
Typical Applications
• Half−bridge Power Converters
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
NCP5111 = Specific Device Code
A = Assembly Location
L or WL = Wafer Lot
Y or YY = Year
W or WW = Work Week
G or G = Pb−Free Package
www.onsemi.com
1
PDIP−8
P SUFFIX
CASE 626
NCP5111
AWL
YYWWG
Device Package Shipping
†
ORDERING INFORMATION
NCP5111PG PDIP−8
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCP5111DR2G SOIC−8
(Pb−Free)
2500 / Tape & Ree
(Note: Microdot may be in either location)
PINOUT INFORMATION
2
3
4
1
7
6
5
8
DRV_LO
IN
VCC
GND
VBOOT
DRV_HI
BRIDGE
NC
P5111
ALYW
G
1
8
