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ESH3C-M3/57T

P1-P3P4-P5
ESH3B-M3, ESH3C-M3, ESH3D-M3
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converter and inverter for
both consumer, and automotive.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V, 150 V, 200 V
t
rr
25 ns
V
F
0.90 V
T
J
max. 175 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT
Device marking code EHB EHC EHD
Maximum repetitive peak reverse voltage V
RMM
100 150 200
VMaximum RMS voltage V
RMS
70 105 140
Maximum DC blocking voltage V
DC
100 150 200
Maximum average forward rectified current (fig. 1) I
F(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ESH3B-M3, ESH3C-M3, ESH3D-M3
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
2
Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB with 12.0 mm x 12.0 mm land areas
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage I
F
= 3 A V
F
(1)
0.90 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
5.0
µA
T
A
= 125 °C 150
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A t
rr
25
ns
Typical reverse recovery time
I
F
= 3 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
40
T
J
= 100 °C 55
Typical stored charge
I
F
= 3 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
25
nC
T
J
= 100 °C 60
Typical junction capacitance 4.0 V, 1 MHz C
J
70 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT
Typical thermal resistance
R
JA
(1)
50
°C/W
R
JL
(1)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH3D-M3/57T 0.211 57T 850 7" diameter plastic tape and reel
ESH3D-M3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ESH3B-M3, ESH3C-M3, ESH3D-M3
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
3
Document Number: 88461
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Lead Temperature (°C)
Average Forward Rectified Current (A)
0 25 50 75 100 125 150 175
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Peak Forward Surge
Current (A)
Number of Cycles at 60 Hz
125
100
75
50
25
0
1 10 100
0.2 0.4 0.6 0.8 1.0 1.2
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Forward Current (A)
020406080 100
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
1000
100
10
1
100
10
1
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
P1-P3P4-P5

ESH3C-M3/57T

Mfr. #:
Buy ESH3C-M3/57T
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3A,150V,25NS,UF Rect, SMD
Lifecycle:
New from this manufacturer.
Delivery:
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