0 40 80 120 160
0
20
40
60
80
100
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
100
200
300
400
0.5 1.0 1.5 2.0
0
20
40
60
80
1 10 100 1000 10000
0.00
0.20
0.40
0.60
0.80
1.00
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
2
10
3
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Fig. 6 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 10 20 30 40
0
20
40
60
I
T(AV)
[A]
tot
W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 40 80 120 160
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
1 10 100 1000 10000
0.1
1
10
V
G
[V]
I
G
[mA]
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
1
2
3
4
5
6
1: I
GD
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
T
VJ
= 25°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
i R
thi
(K/W) t
i
(s)
1 0.0200 0.0004
2 0.0900 0.0090
3 0.1900 0.0140
4 0.3700 0.0600
5 0.2300 0.3900
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20161222cData according to IEC 60747and per semiconductor unless otherwise specified
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