I
NTEGRATED
C
IRCUITS
D
IVISION
3 www.ixysic.com R04
CPC7557
1.4 Recommended Operating Conditions
1.5 General Conditions
Typical values are characteristic of the device at 25C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for T
A
=25C.
1.6 DC Electrical Characteristics
1.7 AC Electrical Characteristics
2 Typical Performance Data
Parameter Symbol Minimum Maximum Units
Diode Forward Current (Average)
I
F
- 240
mA
rms
Reverse Voltage
V
R
- 100 V
Operating Temperature Range
T
A
-40 +125 C
Thermal Impedance
JA
120 - C/W
Parameter Conditions Symbol Minimum Typical Maximum Units
Forward Current
-
I
F
- - 240
mA
rms
Diode Forward Voltage Drop
I
F
= 40mA
V
F
0.83 0.91 0.97
V
I
F
= 250mA
1 1.3 1.49
Reverse Voltage Leakage Current
V
R
=100V I
R
--1A
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Zero Bias Capacitance
V
+
V
= 0V
Measured from V
A
to V
B
C
AB
-4.412pF
Output Zero Bias Capacitance
V
A
= V
B
Measured from V
+
to V
C
+/
-8.320pF
Bridge Zero Bias Capacitance
V
+
V
= 0V Measured from
V
A
to
V
+/-
and V
B
to
V
+/-
C
A/+
, C
A/
,
C
B/+
, C
B/
-8.512pF
2.8
2.6
2.4
2.0
1.8
1.6
-20 20 60-40 0 40 80
Temperature (ºC)
Diode Forward Voltage (V)
Bridge Forward Voltage (V
F
)
vs. Temperature
100
1.4
1.2
1.0
I
F
=250mA
I
F
=40mA
2.2
1.6
1.4
1.2
1.0
0.8
0.6
-20 20 60-40 0 40 80
Temperature (ºC)
Diode Forward Voltage (V)
Diode Forward Voltage (V
F
)
vs. Temperature
100
0.4
0.2
0
I
F
=250mA
I
F
=40mA
152
150
148
146
144
142
-20 20 60-40 0 40 80
Temperature (ºC)
Reverse Breakdown Voltage (V)
Diode Reverse Breakdown Voltage (V
RRM
)
vs. Temperature
100
140
138
