SZNUP3105LT1G

© Semiconductor Components Industries, LLC, 2014
October, 2016 − Rev. 3
1 Publication Order Number:
NUP3105L/D
NUP3105L, SZNUP3105L
Dual Line CAN
Bus Protector
The SZ/NUP3105L has been designed to protect the CAN
transceiver in 24 V systems from ESD and other harmful transient
voltage events. This device provides bidirectional protection for each
data line with a single compact SOT−23 package, giving the system
designer a low cost option for improving system reliability and
meeting stringent EMI requirements.
Features
350 W Peak Power Dissipation per Line (8/20 msec Waveform)
Low Reverse Leakage Current (< 100 nA)
Low Capacitance High−Speed CAN Data Rates
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Industrial Control Networks
Smart Distribution Systems (SDS
®
)
DeviceNet
Automotive Networks
Low and High−Speed CAN
Fault Tolerant CAN
Trucks
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
27F = Device Code
M = Date Code
G = Pb−Free Package
SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
1
27F MG
G
CAN
Transceiver
CAN_H
CAN_L
NUP3105L
CAN Bus
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
www.onsemi.com
NUP3105L, SZNUP3105L
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol
Rating Value Unit
PPK Peak Power Dissipation
8 x 20 ms Double Exponential Waveform (Note 1)
350
W
T
J
Operating Junction Temperature Range −55 to 150 °C
T
J
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
400
30
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 2) 32 V
V
BR
Breakdown Voltage I
T
= 1 mA (Note 3) 35.6 V
I
R
Reverse Leakage Current V
RWM
= 32 V 100 nA
V
C
Clamping Voltage
I
PP
= 5 A (8/20 ms Waveform)
(Note 4)
59 V
V
C
Clamping Voltage
I
PP
= 8 A (8/20 ms Waveform)
(Note 4)
66 V
I
PP
Maximum Peak Pulse Current
8/20 ms Waveform (Note 4)
8.0 A
CJ Capacitance V
R
= 0 V, f = 1 MHz (Line to GND) 30 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 1. Pulse Waveform, 8/20 ms
110
90
80
70
60
50
40
30
20
10
0
0 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
t
r
= 8 ms
t
d
= 20 ms
t
d
= I
PP
/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
12.0
10.0
8.0
6.0
4.0
2.0
45 60
V
C
, CLAMPING VOLTAGE (V)
I
PP
, PEAK PULSE CURRENT (A)
50 55 65 7
0
100
10 20
c−t
PULSE WAVEFORM
8 x 20 ms per Figure 1
NUP3105L, SZNUP3105L
www.onsemi.com
3
TVS Diode Protection Circuit
TVS diodes provide protection to a transceiver by
clamping a surge voltage to a safe level. TVS diodes have
high impedance below and low impedance above their
breakdown voltage. A TVS Zener diode has its junction
optimized to absorb the high peak energy of a transient
event, while a standard Zener diode is designed and
specified to clamp a steady state voltage.
Figure 3 provides an example of a dual bidirectional
TVS diode array that can be used for protection with the
high−speed CAN network. The bidirectional array is created
from four identical Zener TVS diodes. The clamping
voltage of the composite device is equal to the breakdown
voltage of the diode that is reversed biased, plus the diode
drop of the second diode that is forwarded biased.
Figure 3. High−Speed and Fault Tolerant CAN TVS
Protection Circuit
CAN
Transceiver
CAN_H
CAN_L
NUP3105L
CAN Bus
ORDERING INFORMATION
Device Package Shipping
NUP3105LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZNUP3105LT1G* SOT−23
(Pb−Free)
3,000 / Tape & Reel
NUP3105LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZNUP3105LT3G* SOT−23
(Pb−Free)
10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

SZNUP3105LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors SOT-23 27 CAN BUS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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