Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IXTN600N04T2
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN600N04T2
Fig. 7. Input A
dm
itt
ance
0
20
40
60
80
100
120
140
160
180
200
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
- Vol
t
s
I
D
- Ampere
s
T
J
= 150ºC
25
ºC
- 40
ºC
Fig. 8. T
ra
nsconduc
tanc
e
0
40
80
120
160
200
240
0
20
40
60
80
100
120
140
160
180
200
I
D
- Am
p
eres
g
f s
- Si
emens
T
J
= - 40
ºC
150ºC
25ºC
Fig. 9. Forwa
rd Volta
ge Drop of
Intrinsic
Diode
0
50
100
150
200
250
300
350
0.2
0.
3
0.4
0.
5
0.6
0.
7
0.8
0.
9
1.0
1.1
V
SD
- Vol
t
s
I
S
- Ampe
res
T
J
= 150ºC
T
J
= 25º
C
Fig. 10. G
at
e Charge
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
Q
G
-
N
ano
C
o
ulo
mbs
V
GS
- Vol
t
s
V
DS
= 20V
I
D
= 30
0A
I
G
= 10
mA
Fig. 11. Ca
pac
itanc
e
0.1
1.0
10.0
100.0
0
5
1
0
15
20
25
30
35
40
V
DS
- Vol
ts
Ca
pacit
anc
e - NanoFa
rads
f
= 1 M
H
z
C
iss
C
rss
C
oss
Fi
g. 12.
For
ward
-Bias Safe Op
eratin
g Area
1
10
100
1,00
0
10,000
0.1
1
10
100
V
DS
- Vol
ts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on)
Lim
it
T
J
= 175ºC
T
C
= 25
ºC
Sin
gle Pul
se
100ms
Ex
t
ernal
Lead Li
mit
DC
© 2012 IXYS CORPORATION, All Rights Reserved
IXTN600N04T2
Fi
g.
14. R
esi
stive T
ur
n-o
n R
ise T
im
e
vs. D
rai
n C
ur
ren
t
0
10
20
30
40
50
60
70
80
90
100
40
60
80
100
1
20
140
160
180
200
I
D
- A
m
pere
s
t
r
- Nanoseconds
T
J
= 25
ºC
T
J
=
125ºC
R
G
= 1
,
V
GS
= 10
V
V
DS
= 2
0V
Fi
g.
15.
Resi
stive
T
ur
n-o
n Sw
itch
in
g T
im
es
vs.
Gate Resi
stan
ce
0
100
200
300
400
500
600
123
4567
89
1
0
R
G
- Oh
m
s
t
r
- Nanoseconds
20
40
60
80
100
120
140
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC,
V
GS
= 10
V
V
DS
= 20
V
I
D
= 100A
I
D
= 200A
Fi
g.
16. R
esisti
ve T
u
rn
-off Swi
tchi
ng
T
i
m
es
vs
. Junc
ti
on T
e
m
pera
ture
0
50
100
150
200
250
300
350
400
25
35
45
55
65
75
85
95
105
11
5
125
T
J
- Deg
rees Cen
ti
g
rad
e
t
f
- Nanoseconds
80
90
100
110
120
130
140
150
160
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10
V
V
DS
= 2
0V
I
D
= 200A
I
D
= 100A
Fi
g.
17.
Resi
stive
T
ur
n-o
ff Swi
tchi
ng
T
i
m
es
vs. D
rai
n C
ur
ren
t
0
50
100
150
200
250
300
350
400
40
60
80
100
120
140
16
0
180
200
I
D
- Am
p
eres
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
200
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10V
V
DS
= 2
0V
T
J
= 125ºC,
25ºC
Fi
g.
13.
Resi
stive
T
ur
n-o
n
Ri
se T
i
m
e
vs
. Junc
ti
on T
e
m
pera
ture
0
10
20
30
40
50
60
70
80
90
25
35
45
55
65
75
85
95
105
115
125
T
J
- Deg
rees Ce
n
ti
g
rad
e
t
r
- Nanoseconds
R
G
= 1
, V
GS
= 10V
V
DS
= 20
V
I
D
= 200A
I
D
=
100A
Fig
. 18. Resi
stive T
urn
-off Switchin
g T
im
es
vs. Gate Resistance
0
100
200
300
400
500
600
700
800
12345
6789
1
0
R
G
- Oh
m
s
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
t
d
(
off
)
- Nan
oseco
nds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 2
0V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN600N04T2
IXYS REF: T_600N04T2 (V9)11-05-09
Fi
g. 19.
M
axim
u
m
T
ransi
ent T
h
erm
al Im
p
edance
0.001
0.010
0.100
1.000
0.000
01
0.00
01
0.
001
0.01
0.1
1
10
Puls
e W
i
dth -
Se
c
onds
Z
(th)JC
- ºC /
W
Fi
g. 19
. M
axim
um
T
ransie
nt T
herm
al Im
pe
dance
.sadgsf
gsf
0.300
P1-P3
P4-P6
IXTN600N04T2
Mfr. #:
Buy IXTN600N04T2
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IXTN600N04T2