DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
S17-0578-Rev. A, 24-Apr-17
4
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS FOR DUAL SUPPLIES (V+ = +5 V, V- = -5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V + = +5 V, V - = - 5 V
V
IN
= 2 V, 0.8 V
a
TEMP.
b
LIMITS
UNIT
TYP.
c
-40 °C to +125 °C -40 °C to +85 °C
MIN.
d
MAX.
d
MIN.
d
MAX.
d
Analog Switch
Analog signal range
e
V
ANALOG
Full - - 5 5 - 5 5 V
Drain-source
On-resistance
R
DS(on)
I
S
= 1 mA, V
D
= -3 V, 0 V, +3 V
Room 72 - 115 - 115
Full - - 160 - 140
On-resistance match R
DS(on)
I
S
= 1 mA, V
D
= ± 3 V
Room 0.6 - 2.5 - 2.5
Full - - 5 - 4.5
On-resistance flatness R
flat(on)
I
S
= 1 mA, V
D
= -3 V, 0 V, +3 V
Room 15 - 20 - 20
Full - - 30 - 25
Switch off
leakage current
I
S(off)
V+ = 5.5 V, V- = -5.5 V
V
D
= +4.5 V / -4.5 V
V
S
= -4.5 V / +4.5 V
Room
±
0.0005
-0.1 0.1 -0.1 0.1
nA
Full - -2 2 -0.25 0.25
I
D(off)
Room ± 0.006 -0.1 0.1 -0.1 0.1
Full - -2 2 -0.25 0.25
Switch on
leakage current
I
D(on)
V+ = 5.5 V, V- = -5.5 V
V
D
= V
S
= ± 4.5 V
Room ± 0.008 -0.1 0.1 -0.1 0.1
Full - -6 6 -0.25 0.25
Digital Control
Input current, V
IN
low I
IL
V
IN
under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1
μA
Input current, V
IN
high I
IH
V
IN
under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1
Input capacitance
e
C
IN
f = 1 MHz Room 3 - - - - pF
Dynamic Characteristics
Turn-on time t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= ± 3 V
Room 23 - 50 - 50
ns
Full - - 75 - 60
Turn-off time t
OFF
Room 14 - 35 - 35
Full - - 50 - 45
Break-before-make
time delay
t
BBM
DG613E only, V
S
= 3 V
R
L
= 300 , C
L
= 35 pF
Room 15 - - - -
Full - 2 - 2 -
Charge injection
e
Q
INJ
V
g
= 0 V, R
g
= 0 , C
L
= 1 nF Room 1.4 - - - - pC
Off isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF
f = 10 MHz
Room -59 - - - -
dB
Channel-to-channel
crosstalk
e
X
TALK
Room -74 - - - -
Bandwidth
e
BW R
L
= 50 , C
L
= 5 pF Room 1 - - - - GHz
Source off
capacitance
e
C
S(off)
f = 1 MHz; V
S
= 0 V
Room 3 - - - -
pF
Drain off
capacitance
e
C
D(off)
Room 3 - - - -
Drain on
capacitance
e
C
D(on)
f = 1 MHz; V
S
= V
D
= 0 V Room 7 - - - -
Total harmonic
distortion
e
THD
Signal = 1 V
RMS
, 20 Hz to 20 kHz,
R
L
= 600
Room 0.13 - - - - %
Power Supplies
Power supply current I+
V+ = +5 V, V- = -5 V
V
IN
= 0 V or 5 V
Room 0.001 - 0.1 - 0.1
μA
Full - - 1 - 1
Negative supply
current
I-
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -
Ground current I
GND
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
S17-0578-Rev. A, 24-Apr-17
5
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +5 V, V- = 0 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = +5 V, V- = 0 V
V
IN
= 2 V, 0.8 V
a
TEMP.
b
LIMITS
UNIT
TYP.C
-40 °C to +125 °C -40 °C to +85 °C
MIN.
d
MAX.
d
MIN.
d
MAX.
d
Analog Switch
Analog signal range
e
V
ANALOG
Full - 0 5 0 5 V
Drain-source
On-resistance
R
DS(on)
V+ = 5 V, V- = 0 V
I
S
= 1 mA, V
D
= +3.5 V
Room 130 - 170 - 170
Full - - 235 - 215
On-resistance match R
DS(on)
V+ = 5 V, V- = 0 V,
I
S
= 1 mA, V
D
= 3.5 V
Room 0.6 - 5 - 5
Full - - 12 - 10
On-resistance flatness R
flat(on)
V+ = 5 V, V- = 0 V,
I
S
= 1 mA, V
D
= 0 V, 3.5 V
Room 29 - 50 - 50
Full - - 100 - 90
Switch off
leakage current
I
S(off)
V+ = 5.5 V, V- = 0 V
V
D
= 4.5 V / 1 V
V
S
= 1 V / 4.5 V
Room
±
0.0005
-0.1 0.1 -0.1 0.1
nA
Full - -2 2 -0.25 0.25
I
D(off)
Room ± 0.006 -0.1 0.1 -0.1 0.1
Full - -2 2 -0.25 0.25
Switch on
leakage current
I
D(on)
V+ = 5.5 V, V- = 0 V
V
D
= V
S
= 1 V / 4.5 V
Room ± 0.008 -0.1 0.1 -0.1 0.1
Full - -6 6 -0.25 0.25
Digital Control
Input current, V
IN
low I
IL
V
IN
under test = 0.8 V Full 0.01 -0.1 0.1 -0.1 0.1
μA
Input current, V
IN
high I
IH
V
IN
under test = 2 V Full 0.01 -0.1 0.1 -0.1 0.1
Input capacitance
e
C
IN
f = 1 MHz Room 4 - - - - pF
Dynamic Characteristics
Turn-on time
e
t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 3 V
Room 33 - 60 - 60
ns
Full - - 90 - 80
Turn-off Time
e
t
OFF
Room 14 - 35 - 35
Full - - 45 - 40
Break-before-make
time delay
e
t
BBM
DG613E only, V
S
= 3 V
R
L
= 300 , C
L
= 35 pF
Room 19 - - - -
Full - 2 - 2 -
Charge injection
e
Q
INJ
V
g
= 0 V, R
g
= 0 , C
L
= 1 nF Full 1.5 - - - - pC
Off isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF
f = 10 MHz
Room -59 - - - -
dB
Channel-to-channel
crosstalk
e
X
TALK
Room -70 - - - -
Bandwidth
e
BW R
L
= 50 , C
L
= 5 pF Room 880 - - - - MHz
Source off
capacitance
e
C
S(off)
f = 1 MHz; V
S
= 0 V
Room 3 - - - -
pF
Drain off capacitance
e
C
D(off)
Room 3 - - - -
Drain on capacitance
e
C
D(on)
f = 1 MHz; V
S
= V
D
= 0 V Room 7 - - - -
Power Supplies
Power supply current I+
V
IN
= 0 V or 5 V
Room 0.001 - 0.1 - 0.1
μA
Full - - 1 - 1
Negative supply
current
I-
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -
Ground current I
GND
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
S17-0578-Rev. A, 24-Apr-17
6
Document Number: 78910
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. V
IN
= input voltage to perform proper function
b. Room = 25 °C, Full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
e. Guaranteed by design, not subject to production test
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +3 V, V- = 0 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V + = +3 V, V - = - 0 V
V
IN
= 1.4 V, 0.6 V
a
TEMP.
b
LIMITS
UNIT
TYP.
c
-40 °C to +125 °C -40 °C to +85 °C
MIN.
d
MAX.
d
MIN.
d
MAX.
d
Analog Switch
Analog signal range
e
V
ANALOG
Full - 0 3 0 3 V
Drain source
On-resistance
R
DS(on)
I
S
= 1 mA, V
D
= +1.5 V
Room 305 - 420 - 420
Full - - 600 - 500
Switch off
leakage current
I
S(off)
V+ = 3.3 V, V- = 0 V
V
D
= 3 V / 0.3 V
V
S
= 0.3 V / 3 V
Room
±
0.0005
-0.1 0.1 -0.1 0.1
nA
Full - -2 2 -0.25 0.25
I
D(off)
Room ± 0.006 -0.1 0.1 -0.1 0.1
Full - -2 2 -0.25 0.25
Switch on
leakage current
I
D(on)
V+ = 3.3 V, V- = 0 V
V
D
= V
S
= 0.3 V / 3 V
Room ± 0.008 -0.1 0.1 -0.1 0.1
Full - -6 6 -0.25 0.25
Digital Control
Input current, V
IN
low I
IL
V
IN
under test = 0.6 V Full 0.01 -0.1 0.1 -0.1 0.1
μA
Input current, V
IN
high I
IH
V
IN
under test = 1.4 V Full 0.01 -0.1 0.1 -0.1 0.1
Input capacitance
e
C
IN
f = 1 MHz Room 4 - - - - pF
Dynamic Characteristics
Turn-on time t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 2 V
Room 76 - 115 - 115
ns
Full - - 180 - 155
Turn-off time t
OFF
Room 31 - 58 - 58
Full - - 65 - 60
Break-before-make
time delay
t
BBM
DG613 only, V
S
= 2 V
R
L
= 300 , C
L
= 35 pF
Room 60 - - - -
Full - 10 - 10 -
Charge injection
e
Q
INJ
V
g
= 0 V, R
g
= 0 , C
L
= 1 nF Room 1.4 - - - - pC
Off isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF
f = 10 MHz
Room -59 - - - -
dB
Channel-to-channel
crosstalk
e
X
TALK
Room -71 - - - -
Bandwidth
e
BW R
L
= 50 , C
L
= 5 pF Room 830 - - - - MHz
Source off capacitance
e
C
S(off)
f = 1 MHz; V
S
= 0 V
Room 3 - - - -
pFDrain off capacitance
e
C
D(off)
Room 4 - - - -
Drain on capacitance
e
C
D(on)
f = 1 MHz; V
S
= V
D
= 0 V Room 7 - - - -
Power Supplies
Power supply current I+
V
IN
= 0 V or 3 V
Room 0.001 - 0.1 - 0.1
μA
Full - - 1 - 1
Negative supply
current
I-
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -
Ground current I
GND
Room -0.001 -0.1 - -0.1 -
Full - -1 - -1 -

DG611EEQ-T1-GE4

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs Quad SPST 1.4pC 16-pin TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
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