NXP Semiconductors
PMEG4010ESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
PMEG4010ESB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 27 November 2015 7 / 14
V
R
(V)
0 403010 20
aaa-017975
80
100
60
40
20
120
140
C
d
(pF)
0
f = 1 MHz; T
amb
= 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
aaa-017976
I
F(AV)
(A)
0.0 1.51.00.5
0.4
0.2
0.6
0.8
P
F(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
V
R
(V)
0 403010 20
aaa-017977
0.10
0.15
0.05
0.20
0.25
P
R(AV)
(W)
0.00
(1)
(2)
(3)
(4)
T
j
= 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 50 100 150 1751257525
aaa-017978
0.5
1.0
1.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 9. Average forward current as a function of
ambient temperature; typical values
