IXFH50N30Q3 Datasheet IXFH50N30Q3, IXFT50N30Q3 | P1-P3

DS100336(05/11)

IXFT50N30Q3

IXFH50N30Q3

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 300 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 300 V

V

GSS

Continuous ± 20 V

V

GSM

Transient ± 30 V

I

D25

T

C

= 25°C 50 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

150 A

I

A

T

C

= 25°C50 A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 50 V/ns

P

D

T

C

= 25°C 690 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-268 4.0 g

TO-247 6.0 g

V

DSS

= 300V

I

D25

= 50A

R

DS(on)

≤≤

≤

80m

ΩΩ

Ω

Advance Technical Information

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 300 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4mA 3.5 6.5 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 10 μA

T

J

= 125°C 500 μA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 80 mΩ

HiperFET

TM

Power MOSFETs

Q3-Class

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

Features

z

Low Intrinsic Gate Resistance

z

International Standard Packages

z

Low Package Inductance

z

Fast Intrinsic Rectifier

z

Low R

DS(on)

and Q

G

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

DC-DC Converters

z

Battery Chargers

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC Choppers

z

Temperature and Lighting Controls

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT50N30Q3

IXFH50N30Q3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 19 29 S

C

iss

3160 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 600 pF

C

rss

60 pF

R

Gi

Gate Input Resistance 0.17 Ω

t

d(on)

14 ns

t

r

15 ns

t

d(off)

24 ns

t

f

9 ns

Q

g(on)

65 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

22 nC

Q

gd

32 nC

R

thJC

0.18 °C/W

R

thCS

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 50 A

I

SM

Repetitive, Pulse Width Limited by T

JM

200 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

250 ns

I

RM

11.8

A

Q

RM

940 nC

I

F

= 25A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXFT50N30Q3

IXFH50N30Q3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

45

50

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8.5

V

7

V

8

V

9

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8

V

9

V

7

V

8.5

V

9.5

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

5

10

15

20

25

30

35

40

45

50

0123456789

V

DS

- Volts

I

D

- Amperes

7

V

8V

6V

V

GS

= 10V

9V

Fig. 4. R

DS(on)

Normalized to I

D

= 25A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 50A

I

D

= 25A

Fig. 5. R

DS(on)

Normalized to I

D

= 25A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 10203040506070

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

10

20

30

40

50

60

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFH50N30Q3

IXFH50N30Q3

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