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IRF3711SPBF

P1-P3P4-P6P7-P9P10-P12
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-to-Source Voltage ± 20 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 110
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 69 A
I
DM
Pulsed Drain Current 440
P
D
@T
C
= 25°C Maximum Power Dissipation 120 W
P
D
@T
A
= 25°C Maximum Power Dissipation 3.1 W
Linear Derating Factor 0.96W/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 150 °C
www.irf.com 1
2/27/04
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
20V 6.0mΩ 110A
Notes through are on page 11
Absolute Maximum Ratings
D
2
Pak
IRF3711SPbF
TO-220AB
IRF3711PbF
TO-262
IRF3711LPbF
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.04
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB mount) ––– 40
Applications
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
PD- 94948
l Lead-Free
2 www.irf.com
IRF3711/S/LPbF
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.88 1.3 V T
J
= 25°C, I
S
= 30A, V
GS
= 0V
––– 0.82 ––– T
J
= 125°C, I
S
= 30A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 50 75 ns T
J
= 25°C, I
F
= 16A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 48 72 ns T
J
= 125°C, I
F
= 16A, V
R
=10V
Q
rr
Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 460 mJ
I
AR
Avalanche Current ––– 30 A
Avalanche Characteristics
S
D
G
Diode Characteristics
110
440
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 53 ––– ––– S V
DS
= 16V, I
D
= 30A
Q
g
Total Gate Charge ––– 29 44 I
D
= 15A
Q
gs
Gate-to-Source Charge ––– 7.3 ––– nC V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 8.9 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 33 ––– V
GS
= 0V, V
DS
= 10V
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= 10V
t
r
Rise Time ––– 220 ––– I
D
= 30A
t
d(off)
Turn-Off Delay Time ––– 17 ––– R
G
= 1.8Ω
t
f
Fall Time ––– 12 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 2980 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 1770 ––– pF V
DS
= 10V
C
rss
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 4.7 6.0 V
GS
= 10V, I
D
= 15A
––– 6.2 8.5 V
GS
= 4.5V, I
D
= 12A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 16V, V
GS
= 0V
––– ––– 100 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -16V
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
www.irf.com 3
IRF3711/S/LPbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
110A
P1-P3P4-P6P7-P9P10-P12

IRF3711SPBF

Mfr. #:
Buy IRF3711SPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC
Lifecycle:
New from this manufacturer.
Delivery:
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