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MC34163DWR2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 6
1 Publication Order Number:
MC34163/D
MC34163, MC33163
3.4 A, Step-Up/Down/
Inverting Switching
Regulators
The MC34163 series are monolithic power switching regulators that
contain the primary functions required for dc−to−dc converters. This
series is specifically designed to be incorporated in step−up,
step−down, and voltage−inverting applications with a minimum
number of external components.
These devices consist of two high gain voltage feedback
comparators, temperature compensated reference, controlled duty
cycle oscillator, driver with bootstrap capability for increased
efficiency, and a high current output switch. Protective features consist
of cycle−by−cycle current limiting, and internal thermal shutdown.
Also included is a low voltage indicator output designed to interface
with microprocessor based systems.
These devices are contained in a 16 pin dual−in−line heat tab plastic
package for improved thermal conduction.
Features
• Output Switch Current in Excess of 3.0 A
• Operation from 2.5 V to 40 V Input
• Low Standby Current
• Precision 2% Reference
• Controlled Duty Cycle Oscillator
• Driver with Bootstrap Capability for Increased Efficiency
• Cycle−by−Cycle Current Limiting
• Internal Thermal Shutdown Protection
• Low Voltage Indicator Output for Direct Microprocessor Interface
• Heat Tab Power Package
• Moisture Sensitivity Level (MSL) Equals 1
• Pb−Free Packages are Available*
16
9
10
11
12
13
14
15
8
7
6
5
4
3
2
Control Logic
and Thermal
Shutdown
LVI
OSC
+
+
-
Voltage
Feedback 2
Voltage
Feedback 1
GND
Timing
Capacitor
V
CC
I
pk
Sense
Bootstrap
Input
Switch
Emitter
GND
Switch
Collector
Driver
Collector
+
+
+
I
Limit
VFB
Figure 1. Representative Block Diagram
(Bottom View)
-
+
+
+
-
1
LVI Output
This device contains 114 active transistors.
116
15
14
13
12
11
10
9
2
3
4
5
6
7
8
(Top View)
LVI Output
Voltage Feedback 2
Voltage Feedback 1
GND
Timing Capacitor
V
CC
I
pk
Sense
Bootstrap Input
Switch
Emitter
GND
Switch Collector
Driver Collector
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
x = 3 or 4
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
PDIP−16
P SUFFIX
CASE 648C
1
16
SOIC−16W
DW SUFFIX
CASE 751G
http://onsemi.com
16
1
MC3x163DW
AWLYYWWG
16
1
MC3x163P
AWLYYWWG
16
1
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
MC34163, MC33163
http://onsemi.com
2
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Power Supply Voltage V
CC
40 V
Switch Collector Voltage Range V
C(switch)
−1.0 to + 40 V
Switch Emitter Voltage Range V
E(switch)
− 2.0 to V
C(switch)
V
Switch Collector to Emitter Voltage V
CE(switch)
40 V
Switch Current (Note 2) I
SW
3.4 A
Driver Collector Voltage V
C(driver)
−1.0 to +40 V
Driver Collector Current I
C(driver)
150 mA
Bootstrap Input Current Range (Note 2) I
BS
−100 to +100 mA
Current Sense Input Voltage Range V
Ipk
(Sense)
(V
CC
−7.0) to (V
CC
+1.0) V
Feedback and Timing Capacitor Input Voltage Range V
in
−1.0 to + 7.0 V
Low Voltage Indicator Output Voltage Range V
C(LVI)
−1.0 to + 40 V
Low Voltage Indicator Output Sink Current I
C(LVI)
10 mA
Thermal Characteristics
P Suffix, Dual−In−Line Case 648C
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)
DW Suffix, Surface Mount Case 751G
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)
R
q
JA
R
q
JC
R
q
JA
R
q
JC
80
15
94
18
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature (Note 3)
MC34163
MC33163
T
A
0 to +70
− 40 to + 85
°C
Storage Temperature Range T
stg
− 65 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015.
Machine Model Method 150 V.
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
ORDERING INFORMATION
Device Package Shipping
†
MC33163DW SOIC−16W 47 Units / Rail
MC33163DWG SOIC−16W
(Pb−Free)
47 Units / Rail
MC33163DWR2 SOIC−16W 1000 Units / Reel
MC33163DWR2G SOIC−16W
(Pb−Free)
1000 Units / Reel
MC33163P PDIP−16 25 Units / Rail
MC33163PG PDIP−16
(Pb−Free)
25 Units / Rail
MC34163DW SOIC−16W 47 Units / Rail
MC34163DWG SOIC−16W
(Pb−Free)
47 Units / Rail
MC34163DWR2 SOIC−16W 1000 Units / Reel
MC34163DWR2G SOIC−16W
(Pb−Free)
1000 Units / Reel
MC34163P PDIP−16 25 Units / Rail
MC34163PG PDIP−16
(Pb−Free)
25 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MC34163, MC33163
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 15 V, Pin 16 = V
CC
, C
T
= 620 pF, for typical values T
A
= 25°C, for min/max values T
A
is
the operating ambient temperature range that applies (Note 5), unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OSCILLATOR
Frequency
T
A
= 25°C
Total Variation over V
CC
= 2.5 V to 40 V, and Temperature
f
OSC
46
45
50
−
54
55
kHz
Charge Current I
chg
− 225 −
mA
Discharge Current I
dischg
− 25 −
mA
Charge to Discharge Current Ratio I
chg
/I
dischg
8.0 9.0 10 −
Sawtooth Peak Voltage V
OSC(P)
− 1.25 − V
Sawtooth Valley Voltage V
OSC(V)
− 0.55 − V
FEEDBACK COMPARATOR 1
Threshold Voltage
T
A
= 25°C
Line Regulation (V
CC
= 2.5 V to 40 V, T
A
= 25°C)
Total Variation over Line, and Temperature
V
th(FB1)
4.9
−
4.85
5.05
0.008
−
5.2
0.03
5.25
V
%/V
V
Input Bias Current (V
FB1
= 5.05 V) I
IB(FB1)
− 100 200
mA
FEEDBACK COMPARATOR 2
Threshold Voltage
T
A
= 25°C
Line Regulation (V
CC
= 2.5 V to 40 V, T
A
= 25°C)
Total Variation over Line, and Temperature
V
th(FB2)
1.225
−
1.213
1.25
0.008
−
1.275
0.03
1.287
V
%/V
V
Input Bias Current (V
FB2
= 1.25 V) I
IB(FB2)
− 0.4 0 0.4
mA
CURRENT LIMIT COMPARATOR
Threshold Voltage
T
A
= 25°C
Total Variation over V
CC
= 2.5 V to 40 V, and Temperature
V
th(Ipk
Sense)
−
230
250
−
−
270
mV
Input Bias Current (V
Ipk
(Sense)
= 15 V) I
IB(sense)
− 1.0 20
mA
DRIVER AND OUTPUT SWITCH (Note 4)
Sink Saturation Voltage (I
SW
= 2.5 A, Pins 14, 15 grounded)
Non−Darlington Connection (R
Pin
9
= 110 W to V
CC
, I
SW
/I
DRV
≈ 20)
Darlington Connection (Pins 9, 10, 11 connected)
V
CE(sat)
−
−
0.6
1.0
1.0
1.4
V
Collector Off−State Leakage Current (V
CE
= 40 V) I
C(off)
− 0.02 100
mA
Bootstrap Input Current Source (V
BS
= V
CC
+ 5.0 V) I
source(DRV)
0.5 2.0 4.0 mA
Bootstrap Input Zener Clamp Voltage (I
Z
= 25 mA) V
Z
V
CC
+ 6.0 V
CC
+ 7.0 V
CC
+ 9.0 V
LOW VOLTAGE INDICATOR
Input Threshold (V
FB2
Increasing) V
th
1.07 1.125 1.18 V
Input Hysteresis (V
FB2
Decreasing) V
H
− 15 − mV
Output Sink Saturation Voltage (I
sink
= 2.0 mA) V
OL(LVI)
− 0.15 0.4 V
Output Off−State Leakage Current (V
OH
= 15 V) I
OH
− 0.01 5.0
mA
TOTAL DEVICE
Standby Supply Current (V
CC
= 2.5 V to 40 V, Pin 8 = V
CC
,
Pins 6, 14, 15 = GND, remaining pins open)
I
CC
− 6.0 10 mA
4. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
5. T
low
=0°C for MC34163 T
high
=+70°C for MC34163
= − 40°C for MC33163 = + 85°C for MC33163
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MC34163DWR2

Mfr. #:
Buy MC34163DWR2
Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators 40V 3A
Lifecycle:
New from this manufacturer.
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