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SI9435BDY-T1-E3

P1-P3P4-P6P7-P9
Vishay Siliconix
Si9435BDY
Document Number: 72245
S09-0870-Rev. D, 18-May-09
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 30
0.042 at V
GS
= - 10 V
- 5.7
0.055 at V
GS
= - 6 V
- 5.0
0.070 at V
GS
= - 4.5 V
- 4.4
SD
SD
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free)
Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 5.7 - 4.1
A
T
A
= 70 °C
- 4.6 - 3.2
Pulsed Drain Current
I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 2.3 - 1.1
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 70 °C
1.6 0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
40 50
°C/W
Steady State 70 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
24 30
www.vishay.com
2
Document Number: 72245
S09-0870-Rev. D, 18-May-09
Vishay Siliconix
Si9435BDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.0 - 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
- 1
µA
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 70 °C
- 5
On-State Drain Current
b
I
D(on)
V
DS
≤ - 10 V, V
GS
= - 10 V
- 20
A
V
DS
≤ - 5 V, V
GS
= - 4.5 V
- 5
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 5.7 A
0.033 0.042
Ω
V
GS
= - 6 V, I
D
= - 5 A
0.043 0.055
V
GS
= - 4.5 V, I
D
= - 4.4 A
0.056 0.070
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 5.7 A
13 S
Diode Forward Voltage
b
V
SD
I
S
= - 2.3 A, V
GS
= 0 V
- 0.8 - 1.1 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 3.5 A
16 24
nCGate-Source Charge
Q
gs
2.3
Gate-Drain Charge
Q
gd
4.5
Gate Resistance
R
g
8.8 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 15 V, R
L
= 15 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 6 Ω
14 25
ns
Rise Time
t
r
14 25
Turn-Off Delay Time
t
d(off)
42 70
Fall Time
t
f
30 50
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.2 A, dI/dt = 100 A/µs
30 60
Document Number: 72245
S09-0870-Rev. D, 18-May-09
www.vishay.com
3
Vishay Siliconix
Si9435BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
012345
V
GS
= 10 V thru 6 V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
3 V
5 V
4 V
R
DS(on)
- On-Resistance (Ω)
0.00
0.03
0.06
0.09
0.12
0.15
048121620
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0.0 3.2 6.4 9.6 12.8 16.0
V
DS
= 15 V
I
D
= 3.5 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source V
oltage (V)
I
D
- Drain Current (A)
0
220
440
660
880
1100
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 5.7 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
P1-P3P4-P6P7-P9

SI9435BDY-T1-E3

Mfr. #:
Buy SI9435BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 5.7A 0.042Ohm
Lifecycle:
New from this manufacturer.
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