KST64MTF

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

KST63/64

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

* Pulse test: PW≤300µs, Duty Cycle≤2%

Marking Code

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage -30 V

V

CES

Collector-Emitter Voltage -30 V

V

EBO

Emitter-Base Voltage -10 V

I

C

Collector Current -500 mA

P

C

Collector Power Dissipation 350 mW

T

STG

Storage Temperature 150 °C

Symbol Parameter Test Condition Min. Max. Units

BV

CES

Collector-Emitter Breakdown Voltage I

C

= -100, V

BE

=0 -30 V

I

CBO

Collector Cut-off Current V

CE

= -30V, I

E

=0 -100 nA

I

EBO

Emitter Cut-off Current V

EB

= -10V, I

C

=0 -100 nA

h

FE

* DC Current Gain

: KST63

: KST64

: KST63

: K ST64

V

CE

= -5V, I

C

= -10mA

V

CE

= -5V, I

C

= -100mA

5K

10K

10K

20K

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= -100mA, I

B

= -0.1mA -1.5 V

V

BE

(on) Base-Emitter On Voltage V

CE

= -5V, I

C

= -100mA -2.0 V

f

T

Current Gain Bandwidth Product V

CE

= -5V, I

C

= -10mA

f=100MHz

125 MHz

Type KST63 KST64

Mark 2U 2V

KST63/64

Darlington Transistor

2U

Marking

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

KST63/64

Typical Characteristics

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product

-1 -10 -100 -1000

1k

10k

100k

1000k

V

CE

= -5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

I

C

= 1000 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8

1

10

100

V

CE

= -5V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100 -1000

1

10

100

1000

V

CE

= -5V

f

T

[MHz],

CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

0.96~1.14

0.12

0.03~0.10

0.38 REF

0.40

±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03

0.508REF

0.97REF 1.30

±0.10

0.45~0.60

2.40

±0.10

+0.05

–0.023

0.20 MIN

0.40 ±0.03

SOT-23

Package Dimensions

KST63/64

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

Dimensions in Millimeters

KST64MTF

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Darlington Transistors PNP Si Transistor Epitaxial

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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