OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXGH30N60C3D1

P1-P3P4-P6P7-P7
IXGH30N60C3D1
IXGT30N60C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Transconductance
0
4
8
12
16
20
24
0 1020304050607080
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 20A
I
G
= 10 mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2011 IXYS CORPORATION, All Rights Reserved
IXGH30N60C3D1
IXGT30N60C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
4 6 8 101214161820
R
G
- Ohms
E
off
- MilliJoules
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 40A, 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.1
0.2
0.3
0.4
0.5
0.6
10 15 20 25 30 35 40
I
C
- Amperes
E
off
- MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
0.2
0.4
0.6
0.8
1
1.2
1.4
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 300V
I
C
= 40A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40
I
C
- Amperes
t
f i
- Nanoseconds
20
30
40
50
60
70
80
90
100
110
t
d
(
off
)
- Nanoseconds
t
fi
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
IXGH30N60C3D1
IXGT30N60C3D1
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_30N60C3(4D)05-02-11-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
10 15 20 25 30 35 40
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
15
25
35
45
55
65
75
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
15
16
17
18
19
20
21
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
10
20
30
40
50
60
70
80
90
4 6 8 101214161820
R
G
- Ohms
t
r i
- Nanoseconds
14
16
18
20
22
24
26
28
30
t
d
(
on
)
- Nanoseconds
t
ri
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 300V
I
C
= 20A
I
C
= 40A
P1-P3P4-P6P7-P7

IXGH30N60C3D1

Mfr. #:
Buy IXGH30N60C3D1
Manufacturer:
Littelfuse
Description:
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet