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VS-GB75LA60UF

P1-P3P4-P6P7-P9
VS-GB75LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
1
Document Number: 95858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
"Low Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Higher switching frequency up to 150 kHz
• Square RBSOA
•Low V
CE(on)
•FRED Pt
®
hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 70 A at 87 °C
V
CE(on)
typical at 70 A, 25 °C 2.31 V
I
F
DC 70 A at 86 °C
Package SOT-227
Circuit Chopper low side switch
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 109
A
T
C
= 80 °C 75
Pulsed collector current I
CM
120
Clamped inductive load current I
LM
120
Diode continuous forward current I
F
T
C
= 25 °C 113
T
C
= 80 °C 75
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 390
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 447
W
T
C
= 80 °C 250
Power dissipation, diode P
D
T
C
= 25 °C 236
T
C
= 80 °C 132
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
VS-GB75LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
2
Document Number: 95858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 1 mA 600 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 35 A - 1.73 2.0
V
GE
= 15 V, I
C
= 70 A - 2.31 -
V
GE
= 15 V, I
C
= 35 A, T
J
= 125 °C - 2.14 -
V
GE
= 15 V, I
C
= 70 A, T
J
= 125 °C - 3.0 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 2.7 4.5 5.4
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - -10.8 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 5 50 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.17 - mA
Diode reverse breakdown voltage V
BR
I
R
= 1 mA 600 - - V
Diode forward voltage drop V
FM
I
F
= 35 A, V
GE
= 0 V - 1.67 2.33
V
I
F
= 70 A, V
GE
= 0 V - 1.96 -
I
F
= 35 A, V
GE
= 0 V, T
J
= 125 °C - 1.23 -
I
F
= 70 A, V
GE
= 0 V, T
J
= 125 °C - 1.55 -
Diode reverse leakage current I
RM
V
R
= 600 V - 0.1 50 μA
T
J
= 125 °C, V
R
= 600 V - 0.04 - mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A, V
CC
= 400 V, V
GE
= 15 V
- 320 -
nCGate to emitter charge (turn-on) Q
ge
-42-
Gate to collector charge (turn-on) Q
gc
- 110 -
Turn-on switching loss E
on
I
C
= 70 A, V
CC
= 300 V,
V
GE
= 15 V, R
g
= 4.7 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
-0.33-
mJ
Turn-off switching loss E
off
-0.46-
Total switching loss E
tot
-0.79-
Turn-on switching loss E
on
I
C
= 70 A, V
CC
= 300 V,
V
GE
= 15 V, R
g
= 4.7 
L = 500 μH, T
J
= 125 °C
-0.51-
Turn-off switching loss E
off
-0.56-
Total switching loss E
tot
-1.07-
Turn-on delay time t
d(on)
- 166 -
ns
Rise time t
r
-44-
Turn-off delay time t
d(off)
- 188 -
Fall time t
f
-53-
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 120 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V
Fullsquare
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
-64-ns
Diode peak reverse current I
rr
-4.5- A
Diode recovery charge Q
rr
- 144 - nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
- 136 - ns
Diode peak reverse current I
rr
-12- A
Diode recovery charge Q
rr
- 807 - nC
VS-GB75LA60UF
www.vishay.com
Vishay Semiconductors
Revision: 17-Oct-16
3
Document Number: 95858
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical IGBT Output Characteristics, V
GE
= 15 V
Fig. 2 - Typical IGBT Output Characteristics, T
J
= 125 °C
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Junction to case
IGBT
R
thJC
--0.28
°C/WDiode - - 0.53
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
0
25
50
75
100
125
150
0 1.0 2.0 3.0 4.0 5.0
I
C
(A)
V
CE
(V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
0
25
50
75
100
125
150
0 1.0 2.0 3.0 4.0 5.0 6.0
I
C
(A)
V
CE
(V)
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
V
GE
= 9 V
0
20
40
60
80
100
120
140
160
0 20406080100120
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
DC
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
20 40 60 80 100 120 140 160
V
CE
(V)
T
J
(°C)
70 A
100 A
35 A
P1-P3P4-P6P7-P9

VS-GB75LA60UF

Mfr. #:
Buy VS-GB75LA60UF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Output & SW Modules SOT-227 IGBT
Lifecycle:
New from this manufacturer.
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