OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SB5H100-E3/73

P1-P3P4-P4
SB5H90, SB5H100
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
1
Document Number: 88722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
5.0 A
V
RRM
90 V, 100 V
I
FSM
200 A
V
F
0.70 V
I
R
200 μA
T
J
max. 175 °C
Package DO-201AD
Diode variations Single
DO-201AD
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SB5H90 SB5H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current at T
C
= 80 °C I
F(AV)
5.0 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz I
RRM
1.0 A
Storage temperature range T
STG
- 55 to + 175 °C
Maximum operating junction temperature T
J
175 °C
SB5H90, SB5H100
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
2
Document Number: 88722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL SB5H90 SB5H100 UNIT
Maximum instantaneous forward voltage I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.80
V
T
A
= 125 °C 0.70
Maximum reverse current at rated V
R
T
A
= 25 °C
I
R
(2)
200 μA
T
A
= 125 °C 10 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SB5H90 SB5H100 UNIT
Maximum thermal resistance
R
JA
(1)
25
°C/W
R
JL
(1)
8
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PPREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SB5H100-E3/54 1.1 54 1400 13" diameter paper tape and reel
SB5H100-E3/73 1.1 73 1000 Ammo pack packaging
0
0 255075
3.0
4.0
5.0
6.0
100 125 150 200
2.0
1.0
175
Case Temperature (°C)
Average Forward Current (A)
1
10
100
40
80
120
0
240
200
160
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
SB5H90, SB5H100
www.vishay.com
Vishay General Semiconductor
Revision: 20-Jan-14
3
Document Number: 88722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.30.2 0.4 0.5 0.7 0.8 1.0 1.10.1 0.9 1.20.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 175 °C
20 6040 10080
0.01
0.1
1
10
10 000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
100
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
0.1
1
10
0.1
10
1
100
100
0
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
10.1 10010
10
100
1000
10 000
Reverse Voltage (V)
Junction Capacitance (pF)
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
P1-P3P4-P4

SB5H100-E3/73

Mfr. #:
Buy SB5H100-E3/73
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 100 Volt 5.0 Amp 200 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet