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VUB145-16NOXT

P1-P3P4-P6P7-P7
VUB145-16NOXT
3~ Rectifier Bridge + Brake Unit + NTC
Standard Rectifier Module
NTC
19+20
1
10+11
~6+7
~4+5
~2+3
8+9 18 17 21+22
12 13
Part number
VUB145-16NOXT
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● X2PT - 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
● 3~ Rectifier with brake unit
for drive inverters
E2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Phase Change Material available
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
RRM
1600
I 150
FSM
1100
DAV
V
=
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I 180
CE(sat)
1.7
C25
V
=
=
=
V
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB145-16NOXT
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
I
A
V
F
1.20
R
0.5 K/W
R
150
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
250 WT = 25°C
C
R
K/W
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.68
T = 25°C
VJ
150
V
F0
V0.87T = °C
VJ
150
r
F
5.9
mΩ
V1.13T = °C
VJ
I = A
F
V
50
1.74
I = A
F
150
I = A
F
150
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
RRM
V1600
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
37
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t
T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.10
1.19
4.37
4.25
kA
kA
A
kA
935
1.01
6.05
5.89
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
VUB145-16NOXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current
A
180
A
C
VJ
Symbol
Definition
Ratings
typ.
max.
Conditions
Unit
140
V
V
CE(sat)
total power dissipation
500
W
collector emitter leakage current
7.5
V
turn-on delay time
230
ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
300
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
C GE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
C GE CE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current
V = ±20 V
GE
2.1
1.9
6.86
mA
0.1 mA
0.1
500
G(on)
total gate charge
V = V; V = 15 V; I = A
CE
Q
GE C
340
nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
70 ns
380
ns
230
ns
12.5
mJ
11.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE
C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
450
A
R
thJC
thermal resistance junction to case
K/W
V
RRM
V1200
max. repetitive reverse voltage
T = 25°C
VJ
T = 25°C
forward current
A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage
V
2.75
V
VJ
1.60T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current
mA
0.25
mA
VJ
1T = 125°C
VJ
I
R
R RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
5.2
µC
50
A
300
ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
E
rec
1.9 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case
0.9
K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
100
4
100
100
30
30
6.8
6.8
6.8
600
720
1000
600
I
CM
1.7
R
thCH
thermal resistance case to heatsink
0.25
K/W
R
thCH
thermal resistance case to heatsink
K/W
Brake IGBT + Diode
Brake Diode
600 V
80
80
80
80
nA
V = V
CEK
1200
0.10
0.10
IXYS reserves the right to change limits, conditions and dimensions.
20170405fData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
P1-P3P4-P6P7-P7

VUB145-16NOXT

Mfr. #:
Buy VUB145-16NOXT
Manufacturer:
Littelfuse
Description:
IGBT Modules 3 Phase Rectifier Bridge w/ IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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