NTD20N06T4G Datasheet NTD20N06T4G, NTD20N06G, NTD20N06-001 | P1-P3

April, 2017 − Rev. 10

1 Publication Order Number:

NTD20N06/D

NTD20N06, NTDV20N06

Power MOSFET

20 A, 60 V, N−Channel DPAK

Designed for low voltage, high speed switching applications in power

supplies, converters and power motor controls and bridge circuits.

Features

• Lower R

DS(on)

• Lower V

DS(on)

• Lower Capacitances

• Lower Total Gate Charge

• Lower and Tighter V

SD

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

• NTDV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 Vdc

Drain−to−Gate Voltage (R

GS

= 10 MW)

V

DGR

60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t

p

v10 ms)

V

GS

V

GS

±20

±30

Vdc

Drain Current

− Continuous @ T

A

= 25°C

− Continuous @ T

A

= 100°C

− Single Pulse (t

p

v10 ms)

I

D

I

D

I

DM

20

10

60

Adc

Apk

Total Power Dissipation @ T

A

= 25°C

Derate above 25°C

Total Power Dissipation @ T

A

= 25°C (Note 1)

Total Power Dissipation @ T

A

= 25°C (Note 2)

P

D

60

0.40

1.88

1.36

W

W/°C

W

Operating and Storage Temperature Range T

J

, T

stg

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

J

= 25°C

(V

DD

= 25 Vdc, V

GS

= 10 Vdc,

L = 1.0 mH, I

L

(pk) = 18.4 A, V

DS

= 60 Vdc)

E

AS

170 mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

R

q

JC

R

q

JA

R

q

JA

2.5

80

110

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.

N−Channel

D

S

G

60 V

37.5 mW

R

DS(on)

TYP

20 A

I

D

MAXV

(BR)DSS

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

STYLE 2

A = Assembly Location*

20N06 = Device Code

Y = Year

WW = Work Week

G = Pb−Free Package

1

2

3

4

MARKING DIAGRAM

& PIN ASSIGNMENTS

AYWW

20

N06G

See detailed ordering and shipping information on page 2 o

f

this data sheet.

ORDERING INFORMATION

www.onsemi.com

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

NTD20N06, NTDV20N06

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V

GS

= 0 Vdc, I

D

= 250 mAdc)

Temperature Coefficient (Positive)

V

(BR)DSS

60

−

71.7

79.4

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(V

DS

= 60 Vdc, V

GS

= 0 Vdc)

(V

DS

= 60 Vdc, V

GS

= 0 Vdc, T

J

= 150°C)

I

DSS

−

1.0

10

mAdc

Gate−Body Leakage Current (V

GS

= ± 20 Vdc, V

DS

= 0 Vdc) I

GSS

− − ±100 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(V

DS

= V

GS

, I

D

= 250 mAdc)

Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0

−

2.91

6.9

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(V

GS

= 10 Vdc, I

D

= 10 Adc)

R

DS(on)

− 37.5 46

mW

Static Drain−to−Source On−Voltage (Note 3)

(V

GS

= 10 Vdc, I

D

= 20 Adc)

(V

GS

= 10 Vdc, I

D

= 10 Adc, T

J

= 150°C)

V

DS(on)

−

0.78

1.57

1.10

−

Vdc

Forward Transconductance (Note 3) (V

DS

= 7.0 Vdc, I

D

= 6.0 Adc) g

FS

− 13.2 − mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0 Vdc,

f = 1.0 MHz)

C

iss

− 725 1015 pF

Output Capacitance C

oss

− 213 300

Transfer Capacitance C

rss

− 58 120

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

(V

DD

= 30 Vdc, I

D

= 20 Adc,

V

GS

= 10 Vdc,

R

G

= 9.1 W) (Note 3)

t

d(on)

− 9.5 20 ns

Rise Time t

r

− 60.5 120

Turn−Off Delay Time t

d(off)

− 27.1 60

Fall Time t

f

− 37.1 80

Gate Charge

(V

DS

= 48 Vdc, I

D

= 20 Adc,

V

GS

= 10 Vdc) (Note 3)

Q

T

− 21.2 30 nC

Q

1

− 5.6 −

Q

2

− 7.3 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(I

S

= 20 Adc, V

GS

= 0 Vdc) (Note 3)

(I

S

= 20 Adc, V

GS

= 0 Vdc, T

J

= 150°C)

V

SD

−

1.0

0.87

1.2

−

Vdc

Reverse Recovery Time

(I

S

= 20 Adc, V

GS

= 0 Vdc,

dI

S

/dt = 100 A/ms) (Note 3)

t

rr

− 42.9 −

ns

t

a

− 33 −

t

b

− 9.9 −

Reverse Recovery Stored Charge Q

RR

− 0.084 −

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device Package Shipping

†

NTD20N06T4G

DPAK

(Pb−Free)

2500 / Tape & Reel

NTDV20N06T4G

NTDV20N06T4G−VF01

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTD20N06, NTDV20N06

www.onsemi.com

3

0168244

0

32

2

1.6

1.2

1.4

1

0.8

0.6

1

1000

10000

05

16

21

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

0

V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

I

D

, DRAIN CURRENT (AMPS)

0

0.055

0.045

168

0.035

0.025

0.015

24

Figure 3. On−Resistance versus

Gate−to−Source Voltage

I

D

, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

I

D

, DRAIN CURRENT (AMPS)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

I

DSS

, LEAKAGE (nA)

40

−50 50250−25 75 125100

2.6 4.23.4 7

.4

0403020 6

0

10

3

8

V

DS

≥ 10 V

T

J

= 25°C

T

J

= −55°C

T

J

= 100°C

T

J

= 100°C

V

GS

= 10 V

V

GS

= 15 V

150 175

V

GS

= 0 V

I

D

= 10 A

V

GS

= 10 V

24

0.065

0.055

0.045

0.015

0.065

V

GS

= 10 V

T

J

= 25°C

T

J

= −55°C

T

J

= 100°C

40

T

J

= 150°C

T

J

= 100°C

16

0

40

8

24

5 5.8

0.035

0.025

T

J

= 25°C

T

J

= −55°C

50

100

4

9 V

5 V

5.5 V

6 V

6.5 V

8 V

7 V

1.8

32

4.5 V

6.6

32

10

T

J

= 125°C

NTD20N06T4G

NTD20N06T4G

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