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IR2121PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Features
• Gate drive supply range from 12 to 18V
• Undervoltage lockout
• Current detection and limiting loop to limit driven
power transistor current
• Error lead indicates fault conditions and programs
shutdown time
• Output in phase with input
• 2.5V, 5V and 15V input logic compatible
• Also available LEAD-FREE
Description
The IR2121 is a high speed power MOSFET and
IGBT driver with over-current limiting protection cir-
cuitry. Latch immune CMOS technology enables rug-
gedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
down to 2.5V logic. The output driver features a
high pulse current buffer stage designed for mini-
mum cross-conduction. The protection circuitry de-
tects over-current in the driven power transistor and
limits the gate drive voltage. Cycle-by-cycle shut-
down is programmed by an external capacitor which
Data Sheet No. PD60018
-
M
CURRENT LIMITING LOW SIDE DRIVER
Product Summary
V
OFFSET
5V max.
I
O
+/- 1A / 2A
V
OUT
12 - 18V
V
CSth
230 mV
t
on/off
(typ.) 150 & 150 ns
Package
Typical Connection
8-Lead PDIP











IR2121
& (PbF)
www.irf.com 1
(Refer to Lead
Assignments for correct
pin configuration). This/
These diagram(s) show
electrical connections
only. Please refer to our
Application Notes and
DesignTips for proper
circuit board layout.
directly controls the time interval between detection of the over-current limiting condition and latched shut-
down. The output can be used to drive an N-channel power MOSFET or IGBT in the low side configuration.
IR2121 & (PbF)
2 www.irf.com
Parameter Value
Symbol Definition Min. Max. Units
V
CC
Fixed Supply Voltage -0.3 25
V
S
Gate Drive Return Voltage V
CC
- 25 V
CC
+ 0.3
V
O
Output Voltage V
S
- 0.3 V
CC
+ 0.3
V
IN
Logic Input Voltage -0.3 V
CC
+ 0.3
V
ERR
Error Signal Voltage -0.3 V
CC
+ 0.3
V
CS
Current Sense Voltage V
S
- 0.3 V
CC
+ 0.3
P
D
Package Power Dissipation @ T
A
≤ +25°C — 1.0 W
Rth
JA
Thermal Resistance, Junction to Ambient — 125 °C/W
T
J
Junction Temperature — 150
T
S
Storage Temperature -55 150 °C
T
L
Lead Temperature (Soldering, 10 seconds) — 300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Parameter Value
Symbol Definition Min. Max. Units
V
CC
Fixed Supply Voltage V
S
+ 12 V
S
+ 18
V
S
Gate Drive Return Voltage -5 5
V
O
Output Voltage V
S
V
CC
V
IN
Logic Input Voltage 0 V
CC
V
ERR
Error Signal Voltage 0 V
CC
V
CS
Current Sense Signal Voltage V
S
V
CC
T
A
Ambient Temperature -40 125 °C
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
V
V
IR2121 & (PbF)
www.irf.com 3
Parameter Value
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay 7 — 150 200
t
off
Turn-Off Propagation Delay 8 — 200 250
t
sd
ERR Shutdown Propagation Delay 9 — 1.7 2.2 µs
t
r
Turn-On Rise Time 10 — 43 60
t
f
Turn-Off Fall Time 11 — 26 35
t
cs
CS Shutdown Propagation Delay 12 — 0.7 1.2
t
err
CS to ERR Pull-Up Propagation Delay 13 — 9.0 12 C
ERR
= 270 pF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
) = 15V, C
L
= 3300 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics are
defined in Figures 2 through 5.
Parameter Value
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” Input Voltage 14 2.2 — —
V
IL
Logic “0” Input Voltage 15 — — 0.8
V
CSTH+
CS Input Positive Going Threshold 16 150 230 320
V
CSTH-
CS Input Negative Going Threshold 17 130 210 300
V
OH
High Level Output Voltage, V
BIAS
- V
O
18 — — 100 I
O
= 0A
V
OL
Low Level Output Voltage, V
O
19 — — 100 I
O
= 0A
I
QCC
Quiescent VCC Supply Current 20 — 1.1 2.2 mA
V
IN
=
V
CS
= 0V or 5V
I
IN+
Logic “1” Input Bias Current 21 — 4.5 10
V
IN
= 5V
I
IN-
Logic “0” Input Bias Current 22 — — 1.0
V
IN
= 0V
I
CS+
“High” CS Bias Current 23 — 4.5 10
V
CS
= 3V or 5V
I
CS-
“Low” CS Bias Current 24 — — 1.0
V
CS
= 0V
V
CCUV+
V
CC
Supply Undervoltage Positive Going 25 8.3 8.9 9.6
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going 26 7.3 8.0 8.7
Threshold
I
ERR
ERR Timing Charge Current 27 65 100 130
V
IN
= 5V,
V
CS
= 3V
ERR < V
ERR+
I
ERR+
ERR Pull-Up Current 28 8.0 15 —
V
IN
= 5V,
V
CS
= 3V
ERR > V
ERR+
I
ERR-
ERR Pull-Down Current 29 16 30 —
V
IN
= 0V
I
O+
Output High Short Circuit Pulsed Current 30 1.0 1.6 —
V
O
= 0V,
V
IN
= 5V
PW ≤ 10 µs
I
O-
Output Low Short Circuit Pulsed Current 31 2.0 3.3 —
V
O
= 15V,
V
IN
= 0V
PW ≤ 10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM.
The V
O
and I
O
parameters are referenced to V
S
.
ns
ns
µs
V
A
mA
µA
V
µA
mV
V
IN
= 0 & 5V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IR2121PBF

Mfr. #:
Buy IR2121PBF
Manufacturer:
Infineon Technologies
Description:
Gate Drivers 1 CURRENT LIMIT PRGM SHUTDOWN ERROR PIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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