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NCP130AMX210TCG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 3
1 Publication Order Number:
NCP130/D
NCP130
300mA, Very Low Dropout
Bias Rail CMOS Voltage
Regulator
The NCP130 is a 300 mA VLDO equipped with NMOS pass
transistor and a separate bias supply voltage (V
BIAS
). The device
provides very stable, accurate output voltage with low noise suitable
for space constrained, noise sensitive applications. In order to
optimize performance for battery operated portable applications, the
NCP130 features low I
Q
consumption. The XDFN6 1.2 mm x 1.2 mm
package is optimized for use in space constrained applications.
Features
• Input Voltage Range: 0.8 V to 5.5 V
• Bias Voltage Range: 2.4 V to 5.5 V
• Fixed Output Voltage Device
• Output Voltage Range: 0.8 V to 2.1 V
• ±1.5% Accuracy over Temperature, 0.5% V
OUT
@ 25°C
• Ultra−Low Dropout: 150 mV Maximum at 300 mA
• Very Low Bias Input Current of Typ. 80 mA
• Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA
• Logic Level Enable Input for ON/OFF control
• Output Active Discharge Option available
• Stable with a 1 mF Ceramic Capacitor
• Available in XDFN6 − 1.2 mm x 1.2 mm x 0.4 mm package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Battery−powered Equipment
• Smartphones, Tablets
• Cameras, DVRs, STB and Camcorders
BIAS
IN
EN
OUT
GND
1 mF
V
OUT
1.0 V @ 300 mA
V
BIAS
2.7 V
V
IN
1.3 V
V
EN
1 mF
100 nF
NCP130
Figure 1. Typical Application Schematics
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See detailed ordering, marking and shipping information on
page 8 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
XDFN6
CASE 711AT
PIN CONNECTIONS
Thermal
T
Pad
1
2
3
6
5
4
OUT
NC
EN
IN
GND
BIAS
(Top VIew)
XX M
XX = Specific Device Code
M = Date Code
NCP130
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2
EN
CURRENT
LIMIT
THERMAL
LIMIT
UVLO
+
−
VOLTAGE
REFERENCE
IN
BIAS
GND
OUT
*Active
DISCHARGE
ENABLE
BLOCK
*Active output discharge function is present only in NCP130AMXyyyTCG devices.
yyy denotes the particular output voltage option.
Figure 2. Simplified Schematic Block Diagram
150 W
PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
1 OUT Regulated Output Voltage pin
2 N/C Not internally connected
3 EN Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode.
4 BIAS Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage Lockout Circuit.
5 GND Ground pin
6 IN Input Voltage Supply pin
Pad Should be soldered to the ground plane for increased thermal performance.
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) V
IN
−0.3 to 6 V
Output Voltage V
OUT
−0.3 to (V
IN
+0.3) ≤ 6 V
Chip Enable and Bias Input V
EN,
V
BIAS
−0.3 to 6 V
Output Short Circuit Duration t
SC
unlimited s
Maximum Junction Temperature T
J
150 °C
Storage Temperature T
STG
−55 to 150 °C
ESD Capability, Human Body Model (Note 2) ESD
HBM
2000 V
ESD Capability, Machine Model (Note 2) ESD
MM
200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, XDFN6 1.2 mm x 1.2 mm Thermal Resistance, Junction−to−Air R
q
JA
170 °C/W
NCP130
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3
ELECTRICAL CHARACTERISTICS
−40°C ≤ T
J
≤ 85°C; V
BIAS
= 2.7 V or (V
OUT
+ 1.6 V), whichever is greater, V
IN
= V
OUT(NOM)
+ 0.3 V, I
OUT
= 1 mA, V
EN
= 1 V, unless
otherwise noted. C
IN
= 1 mF, C
BIAS
= 0.1 mF, C
OUT
= 1 mF (effective capacitance) (Note 3). Typical values are at T
J
= +25°C. Min/Max
values are for −40°C ≤ T
J
≤ 85°C unless otherwise noted. (Note 4)
Parameter
Test Conditions Symbol Min Typ Max Unit
Operating Input
Voltage Range
V
IN
V
OUT
+V
DO
5.5 V
Operating Bias Voltage
Range
V
BIAS
(V
OUT
+1.35)
≥2.4
5.5 V
Undervoltage Lock−out V
BIAS
Rising
Hysteresis
UVLO 1.6
0.2
V
Output Voltage
Accuracy
−40°C ≤ T
J
≤ 85°C, V
OUT(NOM)
+ 0.3 V ≤ V
IN
≤
5.0 V, 2.7 V or (V
OUT(NOM)
+ 1.6 V), whichever is
greater < V
BIAS
< 5.5 V, 1 mA < I
OUT
< 300 mA
V
OUT
−1.5 +1.5 %
Output Voltage
Accuracy
V
OUT
±0.5 %
V
IN
Line Regulation V
OUT(NOM)
+ 0.3 V ≤ V
IN
≤ 5.0 V Line
Reg
0.01 %/V
V
BIAS
Line Regulation 2.7 V or (V
OUT(NOM)
+ 1.6 V), whichever is
greater < V
BIAS
<
5.5 V
Line
Reg
0.01 %/V
Load Regulation I
OUT
= 1 mA to 300 mA Load
Reg
1.5 mV
V
IN
Dropout Voltage I
OUT
= 300 mA (Note 5) V
DO
75 150 mV
V
BIAS
Dropout Voltage I
OUT
= 300 mA, V
IN
= V
BIAS
(Note 5) V
DO
1.1 1.4 V
Output Current Limit V
OUT
= 90% V
OUT(NOM)
I
CL
400 550 850 mA
Bias Pin Operating
Current
V
BIAS
= 2.7 V I
BIAS
80 110
mA
Bias Pin Disable
Current
V
EN
≤ 0.4 V I
BIAS(DIS)
0.5 1
mA
Vinput Pin Disable
Current
V
EN
≤ 0.4 V I
VIN(DIS)
0.5 1
mA
EN Pin Threshold
Voltage
EN Input Voltage “H” V
EN(H)
0.9
V
EN Input Voltage “L” V
EN(L)
0.4
EN Pull Down Current V
EN
= 5.5 V I
EN
0.3 1.0
mA
Turn−On Time
C
OUT
= 1 mF, From assertion of V
EN
to
V
OUT
= 98% V
OUT(NOM)
, V
OUT(NOM)
=
1.05 V
t
ON
150
ms
Power Supply
Rejection Ratio
V
IN
to V
OUT
, f = 1 kHz, I
OUT
= 300 mA,
V
IN ≥ V
OUT
+0.5 V
PSRR(V
IN
) 65 dB
V
BIAS
to V
OUT
, f = 1 kHz, I
OUT
= 300 mA,
V
IN ≥ V
OUT
+0.5 V
PSRR(V
BIAS
) 80 dB
Output Noise Voltage V
IN
= V
OUT
+0.5 V, V
OUT(NOM)
= 1.05 V,
f = 10 Hz to 100 kHz
V
N
40
mV
RMS
Thermal Shutdown
Threshold
Temperature increasing 160
°C
Temperature decreasing 140
Output Discharge
Pull−Down
V
EN
≤ 0.4 V, V
OUT
= 0.5 V,
NCP130A options only
R
DISCH
150
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Effective capacitance, including the effect of DC bias, tolerance and temperature. See the Application Information section for more
information.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T
A
= 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
OUT
falls 3% below V
OUT(NOM)
.
P1-P3P4-P6P7-P9

NCP130AMX210TCG

Mfr. #:
Buy NCP130AMX210TCG
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 300MA VLDO BIAS RAIL CMOS
Lifecycle:
New from this manufacturer.
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