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BTA310X-800D,127

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
BTA310X-800D
3Q Hi-Com Triac
BTA310X-800D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 6 / 14
003aaj693
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
I
TSM
(A)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
(1)
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
NXP Semiconductors
BTA310X-800D
3Q Hi-Com Triac
BTA310X-800D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 7 / 14
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle or half cycle; with heatsink
compound; Fig. 6
- - 4 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; without heatsink
compound; Fig. 6
- - 5.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aaj342
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
(1)
(2)
(3)
(4)
t
p
P
t
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BTA310X-800D
3Q Hi-Com Triac
BTA310X-800D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 May 2014 8 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
0.3 - 5 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
0.3 - 5 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
0.3 - 5 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 15 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 15 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 10 mA
V
T
on-state voltage I
T
= 12 A; T
j
= 25 °C; Fig. 10 - 1.25 1.5 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
20 - - V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
1 - - A/ms
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 10 V/µs; gate open circuit
1.5 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 1 V/µs; gate open circuit
4.5 - - A/ms
P1-P3P4-P6P7-P9P10-P12P13-P15

BTA310X-800D,127

Mfr. #:
Buy BTA310X-800D,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA310X-800D/TO-220F/STANDARD
Lifecycle:
New from this manufacturer.
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