Data Sheet AD8057/AD8058
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage (+V
S
to –V
S
) 12.6 V
Internal Power Dissipation
1
SOIC Package (R) 0.8 W
SOT-23-5 Package (RT) 0.5 W
MSOP Package (RM) 0.6 W
Input Voltage (Common Mode) ±V
S
Differential Input Voltage ±4.0 V
Output Short-Circuit Duration
derating curves
Storage Temperature Range (R) −65°C to +125°C
Operating Temperature Range (A Grade) −40°C to +85°C
Lead Temperature (Soldering 10sec) 300°C
1
Specification is for device in free air:
8-lead SOIC package: θ
JA
= 160°C/W
5-lead SOT-23-5 package: θ
JA
= 240°C/W
8-Lead MSOP package: θ
JA
= 200°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8057/AD8058 is limited by the associated rise in junction
temperature. Exceeding a junction temperature of 175°C for
an extended period can result in device failure. Although the
AD8057/AD8058 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction temper-
ature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
AMBIENT TEMPERATURE (°C)
2.0
1.5
0
MAXIMUM POWER DISSIPATION (W)
–50 –40 –30
–20 –10 0
10 20 30 40 50 60 70 80 90
1.0
0.5
T
J
= 150°C
8-LEAD SOIC
8-LEAD MSOP
SOT-23-5
01064-005
Figure 5. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. E | Page 5 of 16
