KSC3488GTA Datasheet KSC3488GBU, KSC3488GTA, KSC3488OBU | P1-P3

KSC3488

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 30 V

V

CEO

Collector-Emitter Voltage 25 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 300 mA

P

C

Collector Power Dissipation 300 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=10mA, I

B

=0 25 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=10µA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=25V, I

E

=0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

=3V, I

C

=0 0.1 µA

h

FE

DC Current Gain V

CE

=1V, I

C

=50mA 70 400

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=300mA, I

B

=30mA 0.14 0.4 V

Classification O Y G

h

FE

70 ~ 140 120 ~ 240 200 ~ 400

KSC3488

Low Frequency Power Amplifier

• Complement to KSA1378

• Collector Dissipation : P

C

=300mW

1.Emitter 2. Collector 3. Base

TO-92S

1

KSC3488

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

012345678910

0

5

10

15

20

25

30

35

40

45

50

I

B

= 450

µ

A

I

B

= 50

µ

A

I

B

= 100

µ

A

I

B

= 400

µ

A

I

B

= 350

µ

A

I

B

= 300

µ

A

I

B

= 250

µ

A

I

B

= 200

µ

A

I

B

= 150

µ

A

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

1 10 100 1000

1

10

100

1000

V

CE

=1V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

0.1 1 10 100

0.01

0.1

1

10

V

CE(sat)

I

C

=10I

B

V

BE(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0

0

20

40

60

80

100

V

CE

=1

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

1 10 100 300

1

10

20

f = 1MHz

I

E

=0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

110100

10

100

1000

V

CE

=5V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

4.00

±0.20

3.72

±0.20

2.86

±0.20

2.31

±0.20

3.70

±0.20

0.77

±0.10

14.47

±0.30

(1.10)

0.49

±0.10

1.27TYP

[1.27±0.20] [1.27±0.20]

1.27TYP

0.66 MAX.

0.35

+0.10

–0.05

TO-92S

Package Dimensions

KSC3488

Dimensions in Millimeters

KSC3488GTA

KSC3488GTA

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