IPP100N08S2L07AKSA1

IPB100N08S2L-07
IPP100N08S2L-07
13 Typical avalanche energy 14 Typ. gate charge
E
AS
= f(T
j
) V
GS
= f(Q
gate
); I
D
= 100 A pulsed
parameter: I
D
=80A parameter: V
DD
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
= f(T
j
); I
D
= 1 mA
0
100
200
300
400
500
600
700
800
900
25 75 125 175
T
j
[°C]
E
AS
[mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
15V 60V
0
2
4
6
8
10
12
0 40 80 120 160 200
Q
gate
[nC]
V
GS
[V]
66
71
76
81
86
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
Rev. 1.0 page 7 2006-03-03
IPB100N08S2L-07
IPP100N08S2L-07
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Infineon Technologies AG
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Infineon Technologies AG 2004
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effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2006-03-03

IPP100N08S2L07AKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 100A TO220-3 OptiMOS
Lifecycle:
New from this manufacturer.
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