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DCX114YK-7-F

P1-P3P4-P6P7-P9P10-P12
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
1 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DC
X
(
xxxx
)
K
DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• Available in Lead Free/RoHS Compliant Version (Note 1)
• “Green” Device (Note 2)
Part Number R1 R2 Marking
DCX124EK
22KΩ 22KΩ
C17
DCX144EK
47KΩ 47KΩ
C20
DCX114YK
10KΩ 47KΩ
C14
DCX123JK
2.2KΩ 47KΩ
C06
DCX114EK
10KΩ 10KΩ
C13
DCX115EK
100KΩ 100KΩ
C15
DCX143TK
4.7KΩ
- C07
DCX114TK
10KΩ
- C12
Mechanical Data
• Case: SC-74R (Note 3)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Table and Page 11
• Ordering Information: See Page 11
• Weight: 0.015 grams (approximate)
R
1
R
1
R
2
R
2
C1 B2 E2
E1 B1 C2
R
1
R
1
C1 B2 E2
E1 B1 C2
R1, R2 Device Schematic R1 only Device Schematic
Maximum Ratings NPN Section @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
50 V
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
V
IN
-10 to +40
-10 to +40
-6 to +40
-5 to +12
-10 to +40
-10 to +40
-5V max
-5V max
V
Output Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
I
O
30
30
70
100
50
20
100
100
mA
Output Current All
I
C(MAX)
100 mA
Thermal Characteristics NPN Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
P
D
300 mW
Thermal Resistance, Junction to Ambient Air (Note 4)
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. SC-74R and SOT-26 have identical dimensions and the only difference is the location of the pin one indicator. Please see the individual device
datasheets for exact details regarding the location of the pin one indicator.
4. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be
exceeded.
Please click here to visit our online spice models database.
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
2 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DC
X
(
xxxx
)
K
Maximum Ratings PNP Section @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
50 V
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
V
IN
+10 to –40
+10 to –40
+6 to –40
+5 to –12
+10 to –40
+10 to –40
+5V max
+5V max
V
Output Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
DCX143TK
DCX114TK
I
O
-30
-30
-70
-100
-50
-20
-100
-100
mA
Output Current All
I
C(MAX)
-100 mA
Thermal Characteristics PNP Section
Characteristic Symbol Value Unit
Power Dissipation (Total) (Note 4)
P
D
300 mW
Thermal Resistance, Junction to Ambient Air (Note 4)
R
θ
JA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics NPN Section @T
A
= 25°C unless otherwise specified
Characteristic (DDC143TK & DDC114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 50μA
Collector-Emitter Breakdown Voltage
BV
CEO
50
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯ −−
V
I
E
= 50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V
Emitter Cutoff Current
I
EBO
⎯ ⎯
0.5
μA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
0.3 V
I
C
/I
B
= 2.5mA / 0.25mA – DCX143TK
I
C
/I
B
= 1mA / 0.1mA – DCX114TK
DC Current Transfer Ratio
h
FE
100 250 600
⎯ I
C
= 1mA, V
CE
= 5V
Input Resistor (R
1
) Tolerance ΔR
1
-30
⎯
+30 %
⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
DCX (xxxx) K
Document number: DS30350 Rev. 6 - 2
3 of 12
www.diodes.com
October 2008
© Diodes Incorporated
DC
X
(
xxxx
)
K
Electrical Characteristics NPN Section (continued) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
V
l(OFF)
0.5
0.5
0.3
0.5
0.5
0.5
1.1
1.1
⎯
⎯
1.1
1.1
⎯
V
V
CC
= 5V, I
O
= 100μA
Input Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
V
l(ON)
⎯
1.65
1.9
⎯
⎯
1.9
1.9
3.0
3.0
1.4
1.1
3.0
3.0
V
V
O
= 0.3V, I
O
= 5mA
V
O
= 0.3V, I
O
= 2mA
V
O
= 0.3V, I
O
= 1mA
V
O
= 0.3V, I
O
= 5mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 1mA
Output Voltage
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
V
O(ON)
⎯
0.1 0.3 V
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
Input Current
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
I
l
⎯ ⎯
0.36
0.18
0.88
3.6
0.88
0.15
mA
V
I
= 5V
Output Current
I
O(OFF)
⎯ ⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DCX124EK
DCX144EK
DCX114YK
DCX123JK
DCX114EK
DCX115EK
G
l
80
68
68
80
30
82
⎯ ⎯ ⎯
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
Input Resistor (R
1
) Tolerance ΔR
1
-30
⎯
+30 %
⎯
Resistance Ratio Tolerance
R
2
/R
1
-20
⎯
+20
% ⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics PNP Section @T
A
= 25°C unless otherwise specified
Characteristic (DCX143TK & DCX114TK only) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
⎯ ⎯
V
I
C
= -50μA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
⎯ ⎯
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
⎯ ⎯
V
I
E
= -50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
-0.5
μA
V
CB
= -50V
Emitter Cutoff Current
I
EBO
⎯ ⎯
-0.5
μA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
-0.3 V
I
C
/I
B
= -2.5mA / -0.25mA - DCX143TK
I
C
/I
B
= -1mA / -0.1mA - DCX114TK
DC Current Transfer Ratio
h
FE
100 250 600
⎯ I
C
= -1mA, V
CE
= -5V
Input Resistor (R
1
) Tolerance ΔR
1
-30
⎯
+30 %
⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
P1-P3P4-P6P7-P9P10-P12

DCX114YK-7-F

Mfr. #:
Buy DCX114YK-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 300MW 10K 47K
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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