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STS25NH3LL-E

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics STS25NH3LL
4/11
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15 V, I
D
= 12.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Figure 13
18
50
75
8
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 25 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 100 A
V
SD
(2)
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
I
SD
= 25 A, V
GS
= 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 25 A,
di/dt = 100 A/µs,
V
DD
= 25 V, T
J
= 150 °C
Figure 18
32
34
2.1
ns
nC
A
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STS25NH3LL Electrical characteristics
5/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs temperature Figure 7. Static drain-source on resistance
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Electrical characteristics STS25NH3LL
6/11
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
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P1-P3P4-P6P7-P9P10-P11

STS25NH3LL-E

Mfr. #:
Buy STS25NH3LL-E
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 30 Volt 25 Amp
Lifecycle:
New from this manufacturer.
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