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PS2833-4-F3-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Data Sheet PN10257EJ03V0DS
4
PS2832-1,-4,PS2833-1,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Ratings
Parameter Symbol
PS2832-1 PS2833-1 PS2832-4 PS2833-4
Unit
Diode Forward Current (DC) IF 50 mA/ch
Reverse Voltage VR 6 V
Power Dissipation Derating
Δ
PD/°C 0.6 0.8 mW/°C
Power Dissipation PD 60 80 mW/ch
Peak Forward Current
*1
I
FP 1 A/ch
Transistor Collector to Emitter Voltage VCEO 300 350 300 350 V
Emitter to Collector Voltage VECO 0.3 V
Collector Current IC 60 mA/ch
Power Dissipation Derating
Δ
PC/°C 1.2 mW/°C
Power Dissipation PC 120 mW/ch
Isolation Voltage
*2
BV 2 500 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at T
A = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2832-1, PS2833-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2832-4, PS2833-4).
Data Sheet PN10257EJ03V0DS
5
PS2832-1,-4,PS2833-1,-4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.2 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 15 pF
Transistor Collector to Emitter Dark
Current
ICEO IF = 0 mA, VCE = 300 V 400 nA
Coupled Current Transfer Ratio
(I
C/IF)
CTR I
F = 1 mA, VCE = 2 V 400 2 000 4 500 %
Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time
*1
t
r VCC = 5 V, IC = 10 mA, RL = 100 Ω 20
μ
s
Fall Time
*1
t
f 5
*1 Test circuit for switching time
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
V
CC
V
OUT
R
L
= 100 Ω
I
F
50 Ω
Pulse Input
PW = 1 ms
Duty cycle = 1/10
In monitor
<R>
Data Sheet PN10257EJ03V0DS
6
PS2832-1,-4,PS2833-1,-4
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
–50
–25
0
25
50
75
100
10 000
100 000
1 000
100
10
1
Collector to Emitter Dark Current I
CEO
(nA)
Ambient Temperature T
A
(°C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
50
75
100
100
80
60
40
20
0
0.8 mW/°C
0.6 mW/°C
PS2832-4
PS2833-4
PS2832-1
PS2833-1
1.2 mW/°C
PS2832-1, -4
PS2833-1, -4
25 50
75
100
120
100
80
60
40
20
0
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(°C)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
50
10
5
1
0.5
0.1
0.7 0.9 1.1 1.3 1.50.8 1.0 1.2 1.4
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
0°C
–25°C
–50°C
T
A
= +100°C
+60°C
+25°C
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1234
5
100
50
10
5
1
0
1 mA
5 mA
3 mA
2 mA
I
F
= 0.5 mA
Collector Current I
C
(mA)
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
0.4 0.6 0.8 1.0
1.2
1.4 1.6
100
50
10
5
1
I
F
= 0.5 mA
1 mA
5 mA
2 mA
3 mA
CTR = 1 068%
2 290%
4 360%
V
CEO
= 300 V
Remark The graphs indicate nominal characteristics.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PS2833-4-F3-A

Mfr. #:
Buy PS2833-4-F3-A
Manufacturer:
Renesas Electronics
Description:
Transistor Output Optocouplers 16pin SSOP Quad DrlngTr DC HI V Cplr
Lifecycle:
New from this manufacturer.
Delivery:
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