AON6810
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=125°C 5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage
1.4 1.8 2.2 V
3.6 4.4
T
J
=125°C 4.8 5.8
5.2 6.5 mΩ
g
FS
83 S
V
SD
0.68 1 V
V
FD1
0.72 0.78
V
FD2
0.72 0.78
I
S
20 A
C
iss
1720 pF
C
oss
746 pF
C
rss
61 pF
R
g
2.6 5.2 7.8 Ω
Q
g
(10V) 24 34 nC
Q
g
(4.5V) 11 20 nC
Q
gs
5.9 nC
Q
gd
3.2 nC
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
Gate Drain Charge
Total Gate Charge
V
DS
=0V, V
GS
=±16V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
ID=250µA, V
GS
=0V
V
GS
=10V, V
DS
=15V, I
D
=20A
Total Gate Charge
Gate Source Charge
VSense Diode Forward Voltage
I
F
=50µA
I
F
=50µA
SWITCHING PARAMETERS
D(on)
t
r
3.5 ns
t
D(off)
57.5 ns
t
f
70 ns
t
rr
20 ns
Q
rr
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.2.0: January 2016 www.aosmd.com Page 2 of 7
