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RLS-73TE-11

P1-P3P4-P4
RLS-73
Diodes
Rev.C 1/3
Leadless High Speed Switching Diode
RLS-73
zApplication zExternal dimensions (Unit : mm)
High speed switching
ＬＬＤＳ
R1.4
1.4
1.4
5.0
1.6
zFeatures
1) Ultra small. (LLDS)
2) For surface mounting
3) High speed (trr=2ns Typ.) & high reliability.
ROHM : LLDS
JEDEC : LL-34
(YELLOW)
3.4±0.2
0.4
0.4
φ1.4±0.1
φ1.5MAX
CATHODE　BAND
zConstruction zLand size figure (Unit : mm) zStructure
Silicon epitaxial planar
zTaping dimensions (Unit : mm)
1.8±0.2 4.0±0.1
φ1.0±0.2
　　　　　0
4.0±0.1
2.0±0.05
3.5±0.05
1.75±0.1
8.0±0.3
0.3MAX
1.6±0.1
3.8±0.1
TE-11
1.5±0.1
　　　 0
zAbsolute maximum ratings (Ta=25°C)
Symbol Unit
V
RM
V
V
R
V
I
FM
mA
Io mA
I
sur
g
e
mA
Pm
Tj
℃
Tstg
℃
Parameter
W
ard current
er dissipation
175
-65 to +175
Limits
80
130
90
400
300
（1s） 600
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Peak reverse current
Average rectified forw
Surge current
Pow
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
V
F
--1.2V
I
F
=100mA
I
R
--0.5µA
V
R
=80V
Ct - - 2.0 pF
V
R
=0.5V , f=1MHz
Trr - - 4.0 ns
V
R
=6.0V,I
F
=10mA,RL=50Ω
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
RLS-73
Diodes
Rev.C 2/3
zElectrical characteristic curves (Ta=25°C)
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
trr DISPERSION MAP
RESERVE RECOVERY TIME:trr(ns)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=175℃
0.1
1
10
100
1000
10000
100000
1000000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=175℃
0.1
1
10
0102030
f=1MHz
0
10
20
30
40
50
60
70
80
90
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
5
10
15
20
8.3ms
Ifsm
1cyc
AVE:11.6A
0
0.5
1
1.5
2
2.5
3
AVE:1.46ns
Ta=25℃
VR=6V
IF=10mA
RL=50Ω
n=10pcs
0
5
10
15
20
110100
1
10
100
0.1 1 10 100
t
Ifsm
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
Rth(j-l)
AVE:926.5mV
Ta=25℃
IF=100mA
n=30pcs
Ta=25℃
VR=80V
n=30pcs
AVE:21.9nA
AVE:0.803pF
Ta=25℃
VR=0.5V
f=1MHz
n=10pcs
8.3ms
Ifsm
1cyc
8.3ms
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
900
910
920
930
940
950
AVE:926.5mV
Ta=25℃
IF=100mA
n=30pcs
0
0.005
0.01
0.015
0.02
0 20406080
Sin(θ＝180)
DC D=1/2
RLS-73
Diodes
Rev.C 3/3
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 25 50 75 100 125 150 175
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 25 50 75 100 125 150 175
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0
5
10
15
20
AVE:7.4kV
C=200pF
R=0Ω
AVE:2.2kV
C=100pF
R=1.5kΩ
Sin(θ＝180)
DC
D=1/2
T
Tj=175℃
D=t/T
t
VR
Io
VR=40V
0A
0V
T
Tj=175℃
D=t/T
t
VR
Io
VR=40V
0A
0V
Sin(θ＝180)
DC
D=1/2
P1-P3P4-P4

RLS-73TE-11

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Description:
DIODE GEN PURP 80V 130MA LLDS
Lifecycle:
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