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VS-GB200TS60NPBF

P1-P3P4-P6P7-P9
VS-GB200TS60NPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
1
Document Number: 94503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
INT-A-PAK “Half Bridge”
(Ultrafast Speed IGBT), 209 A
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: optimized for hard switching speed
•Low V
CE(on)
• 10 μs short circuit capability
• Square RBSOA
•Positive V
CE(on)
temperature coefficient
•HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
•Al
2
O
3
DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
600 V
I
C
DC 209 A
V
CE(on)
at 200 A, 25 °C 2.6 V
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit Half bridge with SMD gate resistor
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 209
A
T
C
= 80 °C 142
Pulsed collector current I
CM
400
Clamped inductive load current I
LM
400
Diode continuous forward current I
F
T
C
= 25 °C 178
T
C
= 80 °C 121
Gate to emitter voltage V
GE
± 20 V
Maximum power dissipation P
D
T
C
= 25 °C 781
W
T
C
= 80 °C 438
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Operating junction temperature range T
J
-40 to +150 °C
VS-GB200TS60NPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
2
Document Number: 94503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 500 μA 600 - -
VCollector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 100 A - 1.95 2.1
V
GE
= 15 V, I
C
= 200 A - 2.6 2.84
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.28 2.5
V
GE
= 15 V, I
C
= 200 A, T
J
= 125 °C - 3.14 3.48
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 3 4.2 6
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.005 0.2
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - 0.01 15
Diode forward voltage drop V
FM
I
C
= 100 A - 1.39 1.78
V
I
C
= 200 A - 1.64 2.2
I
C
= 100 A, T
J
= 125 °C - 1.32 1.69
I
C
= 200 A, T
J
= 125 °C - 1.67 2.30
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
on
I
C
= 200 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 10  L = 200 μH, T
J
= 25 °C
-3.65-
mJ
Turn-off switching loss E
off
-6.9-
Total switching loss E
tot
- 10.55 -
Turn-on switching loss E
on
I
C
= 200 A, V
CC
= 360 V, V
GE
= 15 V,
R
g
= 10  L = 200 μH, T
J
= 125 °C
-3.8-
Turn-off switching loss E
off
-7.8-
Total switching loss E
tot
- 11.6 -
Turn-on delay time t
d(on)
- 507 -
ns
Rise time t
r
- 133 -
Turn-off delay time t
d(off)
- 538 -
Fall time t
f
-92-
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 400 A,
R
g
= 27 V
GE
= 15 V to 0
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C, V
CC
= 400 V, V
P
= 600 V,
R
g
= 27 V
GE
= 15 V to 0
10 - -
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
CC
= 400 V, T
J
= 25 °C
- 226 260 ns
Diode peak reverse current I
rr
-1720A
Diode recovery charge Q
rr
- 1900 2600 nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
CC
= 400 V, T
J
= 125 °C
- 290 330 ns
Diode peak reverse current I
rr
-2530A
Diode recovery charge Q
rr
- 3600 5000 nC
VS-GB200TS60NPbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
3
Document Number: 94503
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical IGBT Output Characteristics
T
J
= 25 °C, t
p
= 500 μs
Fig. 2 - Typical IGBT Output Characteristics
T
J
= 125 °C, t
p
= 500 μs
Fig. 3 - Typical Transfer Characteristics
V
CE
= 20 V, t
p
= 500 μs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Junction to case per leg
IGBT
R
thJC
- 0.13 0.16
°C/WDiode - 0.19 0.32
Case to sink per module R
thCS
-0.1-
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight - 185 - g
I
cE
(A)
V
CE
(V)
01234
0
50
100
150
200
250
300
Vge = 9V
Vge = 12V
Vge = 15V
Vge = 18V
I
cE
(A)
012345
0
50
100
150
200
250
300
Vge = 9V
Vge = 18V
Vge = 15V
Vge = 12V
V
CE
(V)
I
cE
(A)
V
GE
(V)
0123456789
0
50
100
150
200
250
300
Tj = 25°C
Tj = 125°C
04080120160
1
1.5
2
2.5
3
3.5
Ic = 50A
Ic = 100A
Ic = 200A
T
J
, Junction Temperature (°C)
V
CE
, Collector -to-Emitter Voltage (V)
P1-P3P4-P6P7-P9

VS-GB200TS60NPBF

Mfr. #:
Buy VS-GB200TS60NPBF
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules 209 Amp 600 Volt Half-Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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