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BUK9275-100A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK9275-100A
N-channel TrenchMOS logic level FET
Rev. 03 — 15 June 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive and general purpose
power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current V
GS
=5V; T
mb
=25°C;
see Figure 1
; see Figure 3
--21.7A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --88W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=4.5V; I
D
=10A;
T
j
=25°C
--84mΩ
V
GS
=10V; I
D
=10A;
T
j
=25°C
- 6272mΩ
V
GS
=5V; I
D
=10A;
T
j
=25°C;
see Figure 12; see Figure 13
- 6475mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=14A; V
sup
≤ 100 V;
R
GS
=50Ω; V
GS
=5V;
T
j(init)
= 25 °C; unclamped
--100mJ
BUK9275-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 June 2010 2 of 13
NXP Semiconductors
BUK9275-100A
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT428 (DPAK)
2 D drain
3Ssource
mb D mounting base; connected to
drain
3
2
mb
1
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK9275-100A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
V
DGR
drain-gate voltage R
GS
=20kΩ - - 100 V
V
GS
gate-source voltage -10 - 10 V
I
D
drain current T
mb
=25°C; V
GS
=5V; see Figure 1;
see Figure 3
- - 21.7 A
T
mb
=100°C; V
GS
=5V; see Figure 1 - - 15.3 A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed;
see Figure 3
[1]
--87A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 --88W
T
stg
storage temperature -55 - 175 °C
T
j
junction temperature -55 - 175 °C
V
GSM
peak gate-source
voltage
pulsed; t
p
≤ 50 µs -15 - 15 V
Source-drain diode
I
S
source current T
mb
= 25 °C - - 21.7 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C --87A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=14A; V
sup
≤ 100 V; R
GS
=50Ω;
V
GS
=5V; T
j(init)
= 25 °C; unclamped
- - 100 mJ
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9275-100A,118

Mfr. #:
Buy BUK9275-100A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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