Nexperia
BC817W series
45 V, 500 mA NPN general-purpose transistors
BC817W_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 11 June 2018
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4 Marking
Table 5. Marking
Type number Marking code
BC817W
[1]
6D%
BC817-16W
[1]
6A%
BC817-25W
[1]
6B%
BC817-40W
[1]
6C%
[1] % = placeholder for manufacturing site code
5 Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 500 mA
I
CM
peak collector current single pulse; t
p
≤ 1 ms - 1 A
I
BM
peak base current single pulse; t
p
≤ 1 ms - 200 mA
[1]
[2]
- 200 mWP
tot
total power dissipation T
amb
≤ 25 °C
[3]
[2]
- 290 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Valid for all available selection groups.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
