PMEG2010EPA_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 15 December 2009 9 of 13
NXP Semiconductors
PMEG2010EPA
1 A low V
F
MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: with I
M
defined as peak current,
at DC, and with I
RMS
defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
I
FAV()
I
M
δ×=
I
RMS
I
FAV()
=
I
RMS
I
M
δ×=
Fig 14. Package outline SOT1061
09-11-12Dimensions in mm
0.65
max
2.1
1.9
1.6
1.4
0.35
0.25
0.45
0.35
2.1
1.9
1.1
0.9
0.3
0.2
1.05
0.95
1.3
2
3
1
