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VS-20MQ040-M3/5AT

P1-P3P4-P6
VS-20MQ040-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
1
Document Number: 93370
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20MQ040-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package DO-214AC (SMA)
I
F(AV)
2 A
V
R
40 V
V
F
at I
F
0.63 V
I
RM
26 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
3.0 mJ
Cathode Anode
DO-214AC (SMA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 2 A
V
RRM
40 V
I
FSM
t
p
= 5 μs sine 120 A
V
F
2 A
pk
, T
J
= 125 °C 0.63 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-20MQ040-M3 UNITS
Maximum DC reverse voltage V
R
40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
C
= 110 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
2.1
A
50 % duty cycle at T
C
= 112 °C, rectangular waveform
On PC board 9 mm
2
island (0.013 mm thick copper pad area)
2
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
120
A
10 ms sine or 6 ms rect. pulse 30
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH 3 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-20MQ040-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
2
Document Number: 93370
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
2 A
T
J
= 25 °C
0.69
V
1.5 A 0.62
1 A 0.54
2 A
T
J
= 125 °C
0.63
1.5 A 0.56
1 A 0.49
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 26
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.36 V
Forward slope resistance r
t
104 m
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 38 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
(1)
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80 °C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) 2F
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-20MQ040-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-16
3
Document Number: 93370
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 150 ˚C
T
J
= 125 ˚C
T
J
= 25 ˚C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
125 °C
100 °C
75 °C
50 °C
25 °C
T
J
= 150 °C
V
R
-
Reverse Voltage (V)
C
T
-
Junction Capacitance (pF)
10
100
0 5 10 15 20 25 30 35 40
T
J
= 25 °C
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
40
50
60
70
80
90
100
110
120
130
140
150
160
DC
Square wave (D = 0.50)
rated V
R
applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
see note (1)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 0.4 0.8 1.2 1.6 2 2.4
DC
RM
S Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
10
100
10 100 1000 10 000
At any rated load condition
and with rated V
RRM
applied
following surge
t
p
-
Square Wave Pulse Duration (μs)
I
FSM
- Non-Repetitive Surge Current (A)
P1-P3P4-P6

VS-20MQ040-M3/5AT

Mfr. #:
Buy VS-20MQ040-M3/5AT
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 2A 40V Single Die Schottky Rectifier
Lifecycle:
New from this manufacturer.
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