FCP125N65S3R0
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1
0.1
1
10
100
I
D
, Drain Current [A]
V
DS
, Drain−Source Voltage [V]
3
1
10
100
I
D
, Drain Current [A]
V
GS
, Gate−Source Voltage [V]
69
0
0.0
0.1
0.2
0.3
R
DS(ON)
,
Drain−Source On−Resistance [
W]
I
D
, Drain Current [A]
0.0
0.001
0.01
0.1
1
10
100
*Notes:
1. V
GS
= 0 V
2. 250 ms Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
−55
o
C
10 20 30 40 50
0.5 1.0 1.5
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
100000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
Capacitances [pF]
V
DS
, Drain−Source Voltage [V]
= shorted)
C
0 1020304050
0
2
4
6
8
10
V
DS
= 400 V
V
DS
= 130 V
*Note: I
D
= 12 A
V
GS
, Gate−Source Voltage [V]
Q
g
, Total Gate Charge [nC]
110
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. 250 ms Pulse Test
2. T
C
= 255C
*Notes:
1. V
DS
= 20 V
2. 250 ms Pulse Test
1505C
255C
−555C
*Note: T
C
= 255C
V
GS
= 10 V
V
GS
= 20 V
