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SMMBT3904LT1G

P1-P3P4-P6P7-P7
MMBT3904L, SMMBT3904L
www.onsemi.com
4
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
Figure 11. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 13. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0
5.0 10
0.3 0.5 3.0
fe
m
-4
MMBT3904L, SMMBT3904L
www.onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
10
100
1000
0.1
h , DC CURRENT GAIN
10
1
100
1.0
1000
FE
V
CE
= 1.0 V
T
J
= +150°C
+25°C
-55°C
Figure 16. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3904L, SMMBT3904L
www.onsemi.com
6
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
1
0.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 19. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.5
I
C
/I
B
= 10
150°C
25°C
−55°C
I
C
/I
B
= 10
150°C
25°C
−55°C
V
CE
= 1 V
150°C
25°C
−55°C
Figure 20. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
°
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
V
CE
(Vdc)
1001010.10.01
0.001
0.01
0.1
1
IC (A)
Single Pulse Test
@ T
A
= 25°C
Thermal Limit
100 ms
1 s
10 ms
1 ms
Figure 21. Current Gain Bandwidth vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001001010.1
10
100
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
Figure 22. Safe Operating Area
P1-P3P4-P6P7-P7

SMMBT3904LT1G

Mfr. #:
Buy SMMBT3904LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR SPCL TR
Lifecycle:
New from this manufacturer.
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