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ESD7M5.0DT5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
May, 2018 − Rev. 6
1 Publication Order Number:
ESD7M5.0D/D
ESD7M5.0DT5G
ESD Protection Diode
Ultra−Low Capacitance
The ESD7M5.0DT5G is designed to protect voltage sensitive
components from damage due to ESD in applications that require ultra
low capacitance to preserve signal integrity. Excellent clamping
capability, low leakage and fast response time are combined with an
ultra low diode capacitance of 2.5 pF to provide best in class
protection from IC damage due to ESD. The ultra small SOT−723
package is ideal for designs where board space is at a premium. The
ESD7M5.0DT5G can be used to protect two uni−directional lines or
one bi−directional line. When used to protect one bi−directional line,
the effective capacitance is 1.25 pF. Because of its low capacitance, it
is well suited for protecting high frequency signal lines such as
USB2.0 high speed and antenna line applications.
Specification Features:
• Low Capacitance 2.5 pF Max
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.047” x 0.047” (1.20 mm x 1.20 mm)
• Low Body Height: 0.020″ (0.5 mm)
• Stand−off Voltage: 5 V
• Low Leakage
• Response Time is Typically < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
• This is a Pb−Free Device
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 61000−4−2 (ESD) Contact ±10 kV
Total Power Dissipation on FR−5 Board
(Note 1) @ T
A
= 25°C
°P
D
° 150 mW
Storage Temperature Range T
stg
−55 to +150 °C
Junction Temperature Range T
J
−55 to +125 °C
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device Package Shipping
†
ORDERING INFORMATION
ESD7M5.0DT5G SOT−723
(Pb−Free)
8000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
SOT−723
CASE 631AA
L7 = Specific Device Code
M = Date Code
L7 M
1
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
ESD7M5.0DT5G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
P
pk
Peak Power Dissipation
C Capacitance @ V
R
= 0 and f = 1.0 MHz
Uni−Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 1.1 V Max. @ I
F
= 10 mA for all types)
Device
Device
Marking
V
RWM
(V)
I
R
(mA)
@ V
RWM
V
BR
(V)
@ I
T
(Note 2)
I
T
C (pF),
uni−directional
(Note 3)
C (pF),
bi−directional
(Note 4)
V
C
(V)
@ I
PP
= 1 A
(Note 5)
V
C
Max Max Min mA Max Max Max
Per
IEC61000−
4−2
(Note 6)
ESD7M5.0DT5G L7 5.0 1.0 5.4 1.0 2.5 1.25 10.4 Figures 1
and 2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
3. Uni−directional capacitance at f = 1 MHz, V
R
= 0 V, T
A
= 25°C (pin1 to pin 3; pin 2 to pin 3).
4. Bi−directional capacitance at f = 1 MHz, V
R
= 0 V, T
A
= 25°C (pin1 to pin 2).
5. Surge current waveform per Figure 5.
6. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
ESD7M5.0DT5G
www.onsemi.com
3
IEC 61000−4−2 Spec.
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
I
peak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
t
P
= 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
Figure 4. Diagram of ESD Test Setup
50 W
Cable
Device
Under
Test
Oscilloscope
ESD Gun
50 W
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
Figure 5. 8 X 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020406080
t, TIME (ms)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE I
RSM
@ 8 ms
HALF VALUE I
RSM
/2 @ 20 ms
P1-P3P4-P4

ESD7M5.0DT5G

Mfr. #:
Buy ESD7M5.0DT5G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LO CAP ESD PROT 5.0V
Lifecycle:
New from this manufacturer.
Delivery:
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