APT12080JVR Datasheet APT12080JVR | P1-P3

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

On State Drain Current

2

(V

DS

> I

D(on)

x R

DS(on)

Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

050-5576 Rev D

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN TYP MAX

1200

15

0.800

25

250

±100

24

APT12080JVR

1200

15

60

±30

±40

450

3.6

-55 to 150

300

15

50

2500

APT12080JVR

1200V 15A 0.800W

G

D

S

SOT-227

G

S

D

ISOTOP

®

"UL Recognized"

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Chemin de Magret 33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

Power MOS V

®

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

 Faster Switching  100% Avalanche Tested

 Lower Leakage  Popular SOT-227 Package

POWER MOS V

®

DYNAMIC CHARACTERISTICS APT12080JVR

050-5576 Rev D

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Z

q

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

1

Repetitive Rating: Pulse width limited by maximum junction

3

See MIL-STD-750 Method 3471

temperature.

4

Starting T

j

=

+25°C, L = 22.22mH, R

G

=

25W, Peak I

L

= 15A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL/ PACKAGE CHARACTERISTICS

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6W

MIN TYP MAX

6500 7800

530 740

250 375

325 485

29 45

143 215

16 32

12 24

59 90

12 24

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage

2

(V

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

MIN TYP MAX

15

60

1.3

1080

22

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

Symbol

R

qJC

R

qJA

V

Isolation

Torque

MIN TYP MAX

0.28

40

2500

13

UNIT

°C/W

Volts

lbin

UNIT

Amps

Volts

ns

µC

UNIT

pF

nC

ns

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 120 240 360 480 600 0 5 10 15 20 25

02468 0816243240

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT12080JVR

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

30

24

18

12

6

0

1.25

1.20

1.15

1.10

1.05

1.00

0.95

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

30

24

18

12

6

0

50

40

30

20

10

0

16

12

8

4

0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

050-5576 Rev D

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

GS

=10V

V

GS

=20V

T

J

= +125°C

T

J

= +25°C

4.5V

4V

V

GS

=5V, 6V, 7V, 10V & 15V

4.5V

4V

V

GS

=5V, 6V, 7V, 10V & 15V

T

J

= -55°C

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

APT12080JVR

APT12080JVR

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