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Document Number: 69091
S09-0143-Rev. A, 02-Feb-09
Vishay Siliconix
SiE804DF
New Product
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, b
t ≤ 10 s
R
thJA
20 24
°C/W
Maximum Junction-to-Case (Drain Top)
Steady State
R
thJC
(Drain)
0.8 1
Maximum Junction-to-Case (Source)
a, c
R
thJC
(Source)
2.2 2.7
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 150 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
175
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
- 7
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1 3 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V ± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 150 V, V
GS
= 0 V 1
µA
V
DS
= 150 V, V
GS
= 0 V, T
J
= 55 °C 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V 25 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 7.6 A 0.031 0.038
Ω
V
GS
= 6 V, I
D
= 7.4 A 0.032 0.040
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 7.6 A 40 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
3000
pFOutput Capacitance
C
oss
210
Reverse Transfer Capacitance
C
rss
110
Total Gate Charge
Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 7.6 A 70 105
nC
V
DS
= 50 V, V
GS
= 6 V, I
D
= 7.6 A
46 70
Gate-Source Charge
Q
gs
11
Gate-Drain Charge
Q
gd
19
Gate Resistance
R
g
f = 1 MHz 2.1 4.2 Ω
Tur n - On D elay T ime
t
d(on)
V
DD
= 75 V, R
L
= 12.5 Ω
I
D
≅ 6 A, V
GEN
= 6 V, R
g
= 1 Ω
20 30
ns
Rise Time
t
r
15 25
Turn-Off Delay Time
t
d(off)
40 60
Fall Time
t
f
12 20
Switching Time
t
d(on)
V
DD
= 75 V, R
L
= 12.5 Ω
I
D
≅ 6 A, V
GEN
= 10 V, R
g
= 1 Ω
15 25
t
r
10 15
t
d(off)
42 65
t
r
10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C 37
A
Pulse Diode Forward Current
a
I
SM
25
Body Diode Voltage
V
SD
I
S
= 6 A 0.8 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 6 A, dI/dt = 100 A/µs, T
J
= 25 °C
70 110 ns
Body Diode Reverse Recovery Charge
Q
rr
220 330 nC
Reverse Recovery Fall Time
t
a
54
ns
Reverse Recovery Rise Time
t
b
16
