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MSA-0236-TR1G

P1-P3P4-P4
MSA-0236
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth: DC to 2.7 GHz
• 12.0 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)
• Cost Effective Ceramic Microstrip Package
Description
The MSA-0236 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a cost effective, microstrip package. This MMIC is
designed for use as a general purpose 50Ω gain block.
Typical applications include narrow and broad band IF
and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using Avago’s 10 GHz f
T
,
25 GHz f
MAX
, silicon bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold
metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN OUT
MSA
4
1
2
3
36 micro-X Package
2
MSA-0236 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature
[4]
–65 to 150°C
Thermal Resistance
[2,5]
:
θ
jc
= 145°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 6.9 mW/°C for T
C
> 153°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θ
jc
than do alternate methods.
G
P
Power Gain (|S
21
|
2
) f = 0.1 GHz dB 11.5 12.5 13.5
∆G
P
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.6 ±1.0
f
3 dB
3 dB Bandwidth GHz 2.7
Input VSWR f = 0.1 to 3.0 GHz 1.2:1
Output VSWR f = 0.1 to 3.0 GHz 1.4:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
1 dB
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5
IP
3
Third Order Intercept Point f = 1.0 GHz dBm 17.0
t
D
Group Delay f = 1.0 GHz psec 125
V
d
Device Voltage V 4.5 5.0 5.5
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50 Ω Units Min. Typ. Max.
VSWR
Ordering Information
Part Numbers No. of Devices Comments
MSA-0236-BLKG 100 Bulk
MSA-0236-TR1G 1000 7" Reel
3
MSA-0236 Typical Scattering Parameters (Z
O
= 50 Ω, T
A
= 25°C, I
d
= 25 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .08 170 12.6 4.25 176 –18.6 .118 2 .16 –6
0.2 .08 163 12.5 4.23 171 –18.5 .119 2 .15 –10
0.4 .08 147 12.5 4.19 161 –18.4 .120 4 .15 –21
0.6 .08 130 12.4 4.14 152 –18.3 .121 4 .15 –30
0.8 .07 112 12.2 4.09 143 –18.1 .125 7 .15 –39
1.0 .07 91 12.1 4.02 134 –18.0 .126 10 .15 –46
1.5 .06 47 11.6 3.80 112 –17.3 .137 11 .13 –66
2.0 .03 –1 11.0 3.53 91 –16.3 .153 10 .11 –89
2.5 .03 –115 10.2 3.24 75 –15.4 .169 12 .09 –111
3.0 .09 –157 9.3 2.92 57 –15.1 .176 8 .08 –127
3.5 .16 –175 8.3 2.60 39 –14.4 .190 3 .09 –129
4.0 .20 173 7.2 2.29 23 –14.1 .198 –2 .11 –118
5.0 .27 136 5.2 1.81 –6 –13.5 .211 –11 .15 –117
6.0 .41 94 3.2 1.44 –33 –13.5 .212 –24 .11 –148
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25°C
(unless otherwise noted)
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 25 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
15 25 30 403520
Gain Flat to DC
6.0
5.5
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
2
4
6
8
10
12
P
1 dB
(dBm)
I
d
= 40 mA
I
d
= 18 mA
I
d
= 25 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
40
I
d
(mA)
0234561
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
2
3
4
5
6
7
8
11
12
13
7
–55 –25 +25 +85 +125
8
6
5
4
3
2
P
1 dB
(dBm)
NF (dB)
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 25 mA.
NF
G
P
P
1 dB
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
P1-P3P4-P4

MSA-0236-TR1G

Mfr. #:
Buy MSA-0236-TR1G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amplifier Si RFIC
Lifecycle:
New from this manufacturer.
Delivery:
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