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96D4-8G2666ER-AT

P1-P3P4-P6P7-P9P10-P10
Electronics, Inc.
2590 North First Street, San Jose, CA 95131, U.S.A.
Tel: 408-732-5000
Fax: 408-732-5055
http://www.atpinc.com
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Page 1 of 10
Rev. Date: Apr. 10, 2017
DESCRIPTION
The ATP A4B08QD8BNTDSE is a high performance 8GB DDR4-2666 Registered ECC SDRAM memory
module. It is organized as 1024M x 72 in a 288-pin Dual-In-Line Memory Module (DIMM) package. The
module utilizes nine 1024Mx8 DDR4 SDRAMs in FBGA package. The module consists of a 512-byte serial
EEPROM, which contains the module configuration information.
KEY FEATURES
High Density: 8GB (1024M x 72)
DIMM Rank: 1 Rank
Cycle Time: 0.75ns (1333MHz)
CAS Latency: 19(DDR4-2666),17(DDR4-2400),15(DDR4-2133)
Power supply: V
DD
=1.2V ± 0.06V
V
PP
=2.5V± 0.125V
V
DDSPD
=2.2V~3.6V
Support ECC error detection and correction
Nominal and dynamic on-die termination(ODT) for data, strobe, and mask signals
Low-power auto self refresh (LPASR)
Data bus inversion(DBI) for data bus
16 internal banks(x8); 4 groups of 4 banks each
Internal self calibration through ZQ
Temperature controlled refresh (TCR)
Asynchronous Reset
7.8 s refresh interval at lower than T
CASE
85°C, 3.9s refresh interval at 85°C < T
CASE
< 95 °C
Support address and command signals parity function
Selectable BC4 or BL8 on-the fly(OTF)
Dynamic On Die Termination
Fly-by topology
PCB Height: 1.23 inches(31.25mm)
Minimum Thickness of Golden Finger: 30 Micro-inch
RoHS compliant
Part No. Max Freq Interface
A4B08QD8BNTDSE 1333MHz (0.75ns@CL=19) x2 POD12
A
A
T
T
P
P
A
A
4
4
B
B
0
0
8
8
Q
Q
D
D
8
8
B
B
N
N
T
T
D
D
S
S
E
E
8
8
G
G
B
B
D
D
D
D
R
R
4
4
-
-
2
2
6
6
6
6
6
6
R
R
E
E
G
G
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I
S
S
T
T
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E
R
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E
E
D
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C
C
C
C
D
D
I
I
M
M
M
M
A
A
T
T
P
P
A
A
4
4
B
B
0
0
8
8
Q
Q
D
D
8
8
B
B
N
N
T
T
D
D
S
S
E
E
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2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com
Tel. (408) 732-5000 Fax (408) 732-5055
Page 2 of 10
PIN DESCRIPTION
Pin Name Description
A0~A16 Address Inputs
A10/AP Address Input/Auto precharge
A12/BC_n Address Input/Burst chop
BA0,BA1 SDRAM Bank Address
BG0,BG1 Bank group address inputs
RAS_n Row address strobe input
CAS_n Column address strobe input
WE_n Write enable input
CS0_n Chip Selects
CK0_t Clock Inputs, positive line
CK0_c Clock Inputs, negative line
CKE0 Clock Enables
C0~C2 Chip ID
ODT0 On-die termination control lines input
ACT_n Command input: ACT_n indicates an ACTIVATE command.
DQ0~DQ63 Data Input /Output
CB0~CB7 Data check bits Input/Output
DQS0_t~DQS8_t Data strobes
DQS0_c~DQS8_c Data strobes, negative line
TDQS9_t~TDQS17_t Termination Data Strobe
TDQS9_c~TDQS17_c Termination Data Strobe, negative line
SCL Serial clock for temperature sensor/SPD EEPROM
SDA SPD Data Input /Output
SA0~SA2 Serial address inputs
PARITY Parity for command and address
VDD Power supply
VPP DRAM activating power supply
VREFCA Reference voltage for control, command, and address pins.
VSS Ground
VDDSPD SPD Power
ALERT_n Alert output
RESET_n Active LOW asynchronous reset
EVENT_n Temperature sensor Event Output
VTT SDRAM I/O termination supply
VDDQ DRAM DQ power supply
ZQ Reference ball for ZQ calibration
NC No Connect
NF No function
RFU Reserved for future use
A
A
T
T
P
P
A
A
4
4
B
B
0
0
8
8
Q
Q
D
D
8
8
B
B
N
N
T
T
D
D
S
S
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E
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2590 North First Street, San Jose, CA 95131, USA. http://www.atpinc.com
Tel. (408) 732-5000 Fax (408) 732-5055
Page 3 of 10
PIN ASSIGNMENT
No. Designation No. Designation No. Designation No. Designation
1 12V 145 12V 74 CK0_t 218 CK1_t
2 VSS 146 VREFCA 75 CK0_c 219 CK1_c
3 DQ4 147 VSS 76 VDD 220 VDD
4 VSS 148 DQ5 77 VTT 221 VTT
5 DQ0 149 VSS
KEY
6 VSS 150 DQ1 78 EVENT_n 222 PARITY
7
DQS9_t, DM0_n,
DBI0_n, TDQS9_t
151 VSS 79 A0 223 VDD
8 TDQS9_c, DQS9_c 152 DQS0_c 80 VDD 224 BA1
9 VSS 153 DQS0_t 81 BA0 225 A10/AP
10 DQ6 154 VSS 82 RAS_n/A16 226 VDD
11 VSS 155 DQ7 83 VDD 227 RFU
12 DQ2 156 VSS 84 S0_n 228 WE_n /A14
13 VSS 157 DQ3 85 VDD 229 VDD
14 DQ12 158 VSS 86 CAS_n/A15 230 Save_n,NC
15 VSS 159 DQ13 87 ODT0 231 VDD
16 DQ8 160 VSS 88 VDD 232 A13
17 VSS 161 DQ9 89 S1_n 233 VDD
18
DQS10_t, DM1_n,
DBI1_n, TDQS10_t
162 VSS 90 VDD 234 A17,NC
19 TDQS10_c, DQS10_c 163 DQS1_c 91 ODT1 235 C2, NC
20 VSS 164 DQS1_t 92 VDD 236 VDD
21 DQ14 165 VSS 93 S2_n, C0 237 S3_n, C1
22 VSS 166 DQ15 94 VSS 238 SA2
23 DQ10 167 VSS 95 DQ36 239 VSS
24 VSS 168 DQ11 96 VSS 240 DQ37
25 DQ20 169 VSS 97 DQ32 241 VSS
26 VSS 170 DQ21 98 VSS 242 DQ33
27 DQ16 171 VSS 99
DQS13_t, DM4_n,
DBI4_n, TDQS13_t
243 VSS
28 VSS 172 DQ17 100 TDQS13_c, DQS13_c 244 DQS4_c
29
DQS11_t, DM2_n,
DBI2_n, TDQS11_t
173 VSS 101 VSS 245 DQS4_t
30 TDQS11_c, DQS11_c 174 DQS2_c 102 DQ38 246 VSS
31 VSS 175 DQS2_t 103 VSS 247 DQ39
32 DQ22 176 VSS 104 DQ34 248 VSS
33 VSS 177 DQ23 105 VSS 249 DQ35
34 DQ18 178 VSS 106 DQ44 250 VSS
35 VSS 179 DQ19 107 VSS 251 DQ45
36 DQ28 180 VSS 108 DQ40 252 VSS
37 VSS 181 DQ29 109 VSS 253 DQ41
38 DQ24 182 VSS 110
DQS14_t, DM5_n,
DBI5_n, TDQS14_t
254 VSS
39 VSS 183 DQ25 111 TDQS14_c, DQS14_c 255 DQS5_c
P1-P3P4-P6P7-P9P10-P10

96D4-8G2666ER-AT

Mfr. #:
Buy 96D4-8G2666ER-AT
Manufacturer:
Advantech
Description:
Memory Modules 8G DDR4 2666 288PIN 1GX8 REG 1.2V SAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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