MMBT3906K Datasheet MMBT3906K | P1-P3

MMBT3906K Rev. B

MMBT3906K PNP Epitaxial Silicon Transistor

MMBT3906K

PNP Epitaxial Silicon Transistor

General Purpose Transistor

Absolute Maximum Ratings T

a

= 25°C unless otherwise noted

Electrical Characteristics T

a

=25°C unless otherwise noted

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage -40 V

V

CEO

Collector-Emitter Voltage -40 V

V

EBO

Emitter-Base Voltage -5 V

I

C

Collector Current -200 mA

P

C

Collector Power Dissipation 350 mW

T

J,

T

STG

Operating Junction and Storage Temperature Range -55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= -10µA, I

E

= 0 -40 V

BV

CEO

Collector-Emitter Breakdown Voltage * I

C

= -1.0mA, I

B

= 0 -40 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 10µA, I

C

= 0 -5 V

I

CEX

Collector Cut-off Current V

CE

= -30V, V

EB

= -3V -50 nA

h

FE

DC Current Gain * V

CE

= -1V, I

C

= -0.1mA

V

CE

= -1V, I

C

= -1mA

V

CE

= -1V, I

C

= -10mA

V

CE

= -1V, I

C

= -50mA

V

CE

= -1V, I

C

= -100mA

60

80

100

60

30

300

V

CE

(sat) Collector-Emitter Saturation Voltage * I

C

= -10mA, I

B

= -1mA

I

C

= -50mA, I

B

= -5.0mA

-0.25

-0.4

V

BE

(sat) Base-Emitter Saturation Voltage * I

C

= -10mA, I

B

= -1.0mA

I

C

= -50mA, I

B

= -5.0mA

-0.65 -0.85

-0.95

V

f

T

Current Gain Bandwidth Product I

C

= -10mA, V

CE

= -20V, f = 100MHz 250 MHz

C

ob

Output Capacitance V

CB

= -5V, I

E

=0, f=1.0MHz 4.5 pF

NF Noise Figure I

C

= -100µA, V

CE

= -5V, R

S

= 1KΩ

f = 10Hz to 15.7KHz

4 dB

t

ON

Turn On Time V

CC

= -3V, V

BE

= -0.5V

I

C

= -10mA, I

B1

= -1mA

70 ns

t

OFF

Turn Off Time V

CC

= -3V, I

C

= -10mA, I

B1

= I

B2

= -1mA 300 ns

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

2AK

Marking

2 www.fairchildsemi.com

MMBT3906K Rev. B

MMBT3906K PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current

Figure 5. Output Capacitance Figure 6. Power Dissipation vs

Ambient Temperature

0.1 1 10 100

50

100

150

200

250

300

350

Vce=1V

125C

75C

25C

hfe, Current Gain

Collector Current, [mA]

110100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

B=10

125C

75C

25C

Vce(sat), Saturation Current,[V]

Collector Current, [mA]

1 10 100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

B=10

125C

75C

25C

Vbe(sat), Saturation Current,[V]

Collector Current, [mA]

25 50 75 100 125 150

0.1

1

10

V

CB

= 25V

Leakage current of Collector - Base(nA)

Temperature, ['C]

-1 -10 -100

0.1

1

10

100

I

E

= 0

f = 1MHz

C

ob

[pF], Capacitance

V

CB

[V], Collector-Base Voltage

0 25 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

P

D

- Power Dissipation (W)

Temperature, [

O

C]

3 www.fairchildsemi.com

MMBT3906K Rev. B

MMBT3906K PNP Epitaxial Silicon Transistor

Mechanical Dimensions

0.96~1.14

0.12

0.03~0.1

0

0.38 RE

F

0.40 ±0.03

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03

0.508REF

0.97REF 1.30

±0.10

0.45~0.60

2.40

±0.10

+0.05

–0.02

3

0.20 MI

N

0.40 ±0.03

SOT-23

Dimensions in Millimeters

MMBT3906K

MMBT3906K

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