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BSS8402DW-7

P1-P3P4-P6P7-P7
BSS8402DW
Document number: DS30380 Rev. 21 - 2
1 of 7
www.diodes.com
February 2014
© Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
Q1 60V
13.5Ω @ V
GS
= 10V
115mA
Q2 -50V
10Ω @ V
GS
= -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel
BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel
BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel
BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code P R S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
KNP
YM
e3
KNP
YM
KNP = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
BSS8402DW
Document number: DS30380 Rev. 21 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
BSS8402DW
Maximum Ratings – Total Device (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation (Note 5)
P
D
200 mW
Thermal Resistance, Junction to Ambient
R
θJA
625 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Maximum Ratings N-CHANNEL – Q
1
, 2N7002 Section (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
I
D
115
73
800
mA
Maximum Ratings P-CHANNEL – Q
2
, BSS84 Section (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-50 V
Drain-Gate Voltage R
GS
≤ 20KΩ V
DGR
-50 V
Gate-Source Voltage Continuous
V
GSS
±20
V
Drain Current (Note 5) Continuous
I
D
-130 mA
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
BSS8402DW
Document number: DS30380 Rev. 21 - 2
3 of 7
www.diodes.com
February 2014
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL – Q
1
, 2N7002 Section (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0
⎯
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS(on)
⎯
3.2
4.4
7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D(on)
0.5 1.0
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯ ⎯
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
22 50 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
11 25 pF
Reverse Transfer Capacitance
C
rss
⎯
2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(on)
⎯
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Turn-Off Delay Time
t
D(off)
⎯
11 20 ns
Electrical Characteristics P-CHANNEL – Q
2
, BSS84 Section (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-50
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
⎯
⎯
⎯
⎯
-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25°C
Gate-Body Leakage
I
GSS
⎯ ⎯
±10
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.8
⎯
-2.0 V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (on)
⎯ ⎯
10 Ω
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
.05
⎯ ⎯
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯
45 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯ ⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(on)
⎯
10
⎯
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
Turn-Off Delay Time
t
D(off)
⎯
18
⎯
ns
Note: 6. Short duration pulse test used to minimize self-heating effect.
P1-P3P4-P6P7-P7

BSS8402DW-7

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Manufacturer:
Diodes Incorporated
Description:
MOSFET 60 / -50V 200mW
Lifecycle:
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