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BC847BVN-7

P1-P3P4-P6
BC847BVN
Document number: DS30627 Rev. 7 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Two Internally Isolated NPN/PNP Transistors in One Package
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.003 grams (Approximate)
Ordering Information
(Notes 4 & 5)
Part Number
Compliance
Marking
S
ize (inches)
Tape
W
idth (mm)
Quantity per
R
eel
BC847BVN-7 AEC-Q101 KAW 7 8 3,000
BC847BVNQ-7 Automotive KAW 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2010
2011 2012 2013 2014 2015
2016
2017
Code
X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Bottom View
Device Schematic
Top View
C
1
Q
1
Q
2
B
2
E
2
C
2
E
1
B
1
KAW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
KAW
YM
SOT563
S
OT563
BC847BVN
Document number: DS30627 Rev. 7 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
100 mA
Peak Collector Current
I
CM
200 mA
Peak Emitter Current
I
EM
200 mA
Maximum Ratings: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-100 mA
Peak Collector Current
I
CM
-200 mA
Peak Emitter Current
I
EM
-200 mA
Thermal Characteristics
– Total Device
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6) Total Device
P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
833 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Electrical Characteristics: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note
7
)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50 — — V
I
C
= 100µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
45 — — V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6 — — V
I
E
= 100µA, I
C
= 0
DC Current Gain
h
FE
200 290 450 —
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
—
90
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
—
700
900
— mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage
V
BE(on)
580
—
660
—
700
720
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
Collector-Cutoff Current
I
CBO
—
—
—
—
15
5.0
nA
µA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
Gain Bandwidth Product
f
T
100 300 — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 3.5 6.0 pF
V
CB
= 10V, f = 1.0MHz
Note: 7. Short duration pulse test used to minimize self-heating effect.
BC847BVN
Document number: DS30627 Rev. 7 - 2
3 of 6
www.diodes.com
March 2015
© Diodes Incorporated
BC847BVN
Electrical Characteristics: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characte
ristic (Note
8
)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50 — — V
I
C
= -100µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-45 — — V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6 — — V
I
E
= -100µA, I
C
= 0
DC Current Gain
h
FE
220 290 475 —
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
—
-75
-250
-300
-650
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
—
-700
-850
—
-950
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage
V
BE(on)
-600
—
-650
—
-750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current
I
CBO
—
—
—
—
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
Gain Bandwidth Product
f
T
100 200 — MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 3 4.5 pF
V
CB
= -10V, f = 1.0MHz
Note: 8. Short duration pulse test used to minimize self-heating effect.
Thermal Characteristics
– Total Device
-50
0 50
100
150
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1. Power Dissipation vs. Ambient Temperature
Total Device
A
°
P
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
D
R = 833 C/W
θ
JA
°
1
10
100
1,000
1.0 10 1000.10.01
h
D
C
C
U
R
R
E
N
T
G
A
I
N
FE,
I , COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
C
6
10
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
V , REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
R
C
obo
C
ibo
f = 1MHz
0
0.1
0.2
0.3
0.4
0.5
0.1
1.0
10
100
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
C
I
I = 20
C
B
T = 100 C
A
°
T = 25 C
A
°
T = -50 C
A
°
P1-P3P4-P6

BC847BVN-7

Mfr. #:
Buy BC847BVN-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT BIPOLAR COMP.
Lifecycle:
New from this manufacturer.
Delivery:
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