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Vishay Semiconductors
Rev. 2.5, 10-Feb-15
4
Document Number: 83541
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Fig. 5 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 7 - Collector Dark Current vs. Ambient Temperature
Fig. 8 - Collector Current vs. Forward Current
Fig. 9 - Collector Current vs. Collector Emitter Voltage
0255075
0
40
80
120
200
100
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
160
Coupled device
Phototransistor
IR-diode
95 11003
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0
10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11911
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 5 V
I
F
= 10 mA
1
10
100
1000
0 102030405060708090 100
T
amb
- Ambient Temperature (°C)
96 12000
I
CEO
- Collector Dark Current,
with open Base (nA)
V
CE
= 20 V
I
F
= 0
0.1 1 10
0.01
0.1
1
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11012
10
V
CE
= 5 V
0.1 1 10
0.1
1
10
100
V
CE
- Collector Emitter Voltage (V)
100
95 11013
I
C
- Collector Current (mA)
5 mA
2 mA
1 mA
I
F
= 50 mA
10 mA
